Latest Components
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NXP Semiconductors FRDM-MCXE247 PowerDescription
The NXP Semiconductors FRDM-MCXE247 Development Board is a design and evaluation platform based on the NXP MCXE247 microcontroller (MCU). It features an Arm Cortex-M4F core, running at speeds of up to 112MHz, and includes various onboard sensors and components for extensive connectivity options. This board is compatible with Arduino shield modules, Pmod boards, and mikroBUS.
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Infineon Technologies CCG7SCF PowerDescription
Infineon Technologies EZ-PD™ CCG7SCF USB Type-C® Power Delivery (PD) is highly integrated with a buck-boost controller and two switching FETs designed for charging and dock applications. The device complies with USB Type-C and PD specifications, supporting a wide input voltage range and programmable switching frequency. It features a 32-bit Arm® Cortex®-M0 processor with ample flash and RAM for user applications.
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Abracon AMELH4020S PowerDescription
Abracon AMELH4020S Power Inductors are flat wire/hot-press molded power inductors with inductance ranging from 0.042μH to 4.7μH. These inductors feature low DCR, high saturation current, and ultra-low AC losses, making them suitable for various applications. They are designed for improved efficiency and reliable performance in consumer electronics, industrial electronics, and telecom equipment.
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Schurter DG11 PowerDescription
Schurter DG11 Power Entry Modules include a thermo-magnetic circuit breaker type TA35 according to the IEC 60934 standard. These modules are designed to avoid potential damage to equipment caused by increased short-circuit protection. Typical applications include data centers, medical electronics, and industrial automation.
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Abracon AMELH4025S PowerDescription
Abracon AMELH4025S Power Inductors are flat wire/hot-press molded power inductors with inductance ranging from 0.13μH to 4.7μH. These inductors feature low DCR, high saturation current, and ultra-low AC losses, making them suitable for various applications. They provide improved efficiency and thermal performance, supporting higher load currents and superior EMI suppression.
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Renesas Electronics FPB-RA2T1 PowerDescription
The Renesas Electronics FPB-RA2T1 Fast Prototyping Board is a versatile development platform built around the RA2T1 32-bit Arm Cortex-M23 microcontroller. It features a built-in E2 emulator Lite for seamless programming and debugging, along with Arduino Uno and Pmod interfaces for broad expandability. This board is ideal for rapid evaluation and embedded system development.
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ROHM Semiconductor RxL120BLFRA PowerDescription
ROHM Semiconductor RxL120BLFRA Power MOSFETs are automotive-grade MOSFETs that are AEC-Q101 qualified. They feature a 60V drain source breakdown voltage and 30mΩ static drain source on-state resistance, making them suitable for various automotive applications. Ideal for ADAS, infotainment, lighting, and body systems.
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ROHM Semiconductor RxP120BLFRA PowerDescription
ROHM Semiconductor RxP120BLFRA Power MOSFETs are automotive-grade MOSFETs that are AEC-Q101 qualified. The devices supply 100V drain-source breakdown voltage, 62mΩ static drain-source on-state resistance, and ±12A continuous drain current. They are ideal for automotive applications, including ADAS, infotainment, lighting, and body.
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ROHM Semiconductor BD9xND-C PowerDescription
ROHM Semiconductor Nano Cap BD9xND-C LDO Regulators utilize Nano Cap™ topology, designed for low-current-consumption in automotive applications. They support output currents up to 500mA with a low quiescent current of 25μA and provide high output voltage accuracy of ±2.0%. The regulators feature integrated overcurrent protection and thermal shutdown for enhanced reliability.
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Infineon Technologies FF06MR12A04MA2 PowerDescription
Infineon Technologies HybridPACK™ DSC S Modules with SiC MOSFET and NTC are high-performance power modules designed for demanding automotive applications, particularly in hybrid and electric vehicles (xEVs). This compact half-bridge module integrates silicon carbide (SiC) MOSFETs and an NTC thermistor, enabling superior efficiency and thermal performance. With a blocking voltage of 1200V and a nominal current rating of 190A, the modules support high-speed switching with low conduction and switching losses.