Latest Components
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STMicroelectronics X-NUCLEO-ISO1A1 PowerDescription
The STMicroelectronics X-NUCLEO-ISO1A1 Evaluation Board is designed to expand the STM32 Nucleo board and provide micro-PLC functionality. It features isolated industrial input/output for rapid evaluation of onboard ICs using the X-CUBE-ISO1 software package. This board is RoHS compliant and ideal for programmable logic controller applications.
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Infineon Technologies BTT6035-1ERL PowerDescription
Infineon Technologies PROFET™ +24V Smart High-Side Power Switches feature an inbuilt adjustable overcurrent limitation for safeguarding sensitive loads and supply line wires from abnormal currents. These 35mΩ single-channel devices are fitted for switching large capacitive loads. They come in a TDSO-14 package and offer protection and diagnostic functions for itself, attached loads, and power net.
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Infineon Technologies TLE4263-2Gx PowerDescription
Infineon Technologies OPTIREG™ Linear TLE4263-2Gx Voltage Regulators are designed for automotive applications, providing a regulated output voltage of 5.0V from an input voltage up to 45V. These regulators can drive loads up to 180mA and feature short-circuit protection, overtemperature shutdown, and a watchdog circuit for microcontroller monitoring. They are available in SMD PG-DSO-8 or PG-DSO-14 packages.
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STMicroelectronics NUCLEO-C092RC PowerDescription
The STMicroelectronics NUCLEO-C092RC STM32 Nucleo-64 Development Board offers an affordable and flexible way to try concepts and build prototypes provided by the STM32 microcontroller. It supports ARDUINO Uno V3 connectivity and ST morpho headers for full STM32 I/Os access. The board integrates the ST-LINK debugger/programmer and features a 32.768kHz crystal oscillator, user LED, and push-buttons.
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Infineon Technologies REF_MTR_48V30A_GAN PowerDescription
The Infineon Technologies REF_MTR_48V30A_GAN Inverter Reference Board is a high-performance solution designed for low-voltage battery-powered applications, leveraging CoolGaN™ technology. It is optimized for high-efficiency motor drives, making it ideal for electric vehicles, industrial automation, and robotics. This board ensures high power density and precise motor control, enhancing performance and reliability.
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Infineon Technologies OptiMOS 6 150V PowerDescription
Infineon Technologies OptiMOS™ 6 150V Power MOSFETs feature industry-leading low RDS(on), improved switching performance, and excellent EMI behavior, contributing to unparalleled efficiency and reliability. The technology offers significant improvements over its predecessor, including lower RDS(on) and enhanced ruggedness. Designed for high and low-switching frequency applications, these MOSFETs ensure robust operation in demanding environments.
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Advantech AE-ES-001 PowerDescription
Advantech Preconfigured Edge Solutions are designed to streamline the deployment of edge computing systems across various industries. These solutions integrate advanced hardware and software components to provide robust, scalable, and efficient edge computing capabilities. By leveraging cutting-edge technologies such as AI, IoT, and cloud computing, these solutions can handle complex data processing tasks at the network's edge.
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Nexperia PXNx PowerDescription
Nexperia PXNx N-Channel Logic Level Trench MOSFETs are designed for high-efficiency power management in various applications. These MOSFETs feature low on-state resistance and support 60V and 100V drain-source voltages. They are optimized for logic level compatibility and suitable for synchronous rectification, DC-to-DC converters, and LED lighting.
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Bourns SM91803AL-E PowerDescription
Bourns Model SM91803AL-E AEC-Q200-Qualified Battery Management System (BMS) Signal Transformers are automotive-grade signal transformers for next-generation applications. This single-channel transformer is designed with a planar structure for BMS applications, offering a working voltage of up to 1000VDC and a Hi-Pot isolation voltage of up to 4300VDC. It operates within an extended temperature range of -40°C to +125°C.
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Nexperia GANB8R0-040CBA PowerDescription
Nexperia GANB8R0-040CBA Bi-Directional Gallium Nitride (GaN) FET is a 40V, 8.0mΩ bi-directional GaN High Electron-Mobility Transistor (HEMT) housed in a compact 1.7mm x 1.7mm Wafer Level Chip-Scale Package (WLCSP). This normally-off enhancement mode device offers an ultra-high switching speed and low on-state resistance, making it ideal for applications requiring efficient power management and high power density.
