Latest Components
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Macronix MX52LM04A11XVW-T SemiconductorsDescription
Macronix e.MMC™ Embedded Flash Memory Modules are managed flash solutions that comply with the JEDEC e.MMC™ 5.1 standard. These modules integrate the Macronix MLC NAND device and controller chip, offering a standard interface protocol for host systems. Ideal for applications such as smartphones, digital TVs, and tablets, they come in RoHS-compliant packages.
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ROHM Semiconductor RV7E035AT SemiconductorsDescription
The ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET is a compact, high-performance device designed for low-voltage switching applications. It features a drain-source voltage of -30V and a continuous drain current of -3.5A, making it ideal for portable electronics. With excellent switching characteristics and low on-resistance, this MOSFET is optimized for efficient power management.
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onsemi N24C256X SemiconductorsDescription
The onsemi N24C256X 256Kb I2C CMOS Serial EEPROM offers low-power CMOS technology and is organized as 32,768 words of 8-bit each. It supports standard, fast, and fast-plus I2C protocols and features a 64-byte page write buffer along with user programmable permanent write protection. This EEPROM operates within a supply voltage range of 1.7V to 5.5V and is ideal for applications in mobile phone cameras and wireless devices.
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Taiwan Semiconductor BZT52 SemiconductorsDescription
Taiwan Semiconductor BZT52 Surface Mount Zener Diodes are AEC-Q101 qualified diodes that are ideally suited for automated assembly processes. These diodes feature a 2.4V to 75V Zener voltage selection range with ±2% tolerance and exhibit 200mW power dissipation. They come in an SOD-323 package and are used in applications that require general regulation functions.
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Taiwan Semiconductor BZX58 SemiconductorsDescription
Taiwan Semiconductor BZX58 Surface Mount Zener Diodes are AEC-Q101 qualified diodes that are ideally suited for automated assembly processes. These diodes feature a 2.4V to 51V Zener voltage selection range with ±2% tolerance and exhibit 200mW power dissipation. The BZX58 diodes offer a -55°C to 150°C storage temperature range and come in an SOD-523F package.
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onsemi NVBG050N170M1 SemiconductorsDescription
The onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET is designed for fast switching applications with a maximum RDS(ON) of 76mΩ at 20V. It supports a drain-to-source voltage of 1700V and a continuous drain current of 50A, making it suitable for various automotive applications. This MOSFET is 100% avalanche tested and comes in a D2PAK-7L package.
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Taiwan Semiconductor MMSZ52 SemiconductorsDescription
Taiwan Semiconductor MMSZ52 Surface Mount Zener Diodes are AEC-Q101 qualified diodes that are ideally suited for automated assembly processes. These diodes feature a 2.4V to 75V Zener voltage selection range with ±5% tolerance and exhibit 500mW power dissipation. The MMSZ52 diodes offer a -55°C to 150°C storage temperature range and come in an SOD-123 package.
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Infineon Technologies PSOC4HVMS SemiconductorsDescription
Infineon Technologies PSOC™ 4 HVMS Lite Kits are designed to accelerate development with the PSOC™ 4 HVMS series and offer a single-chip solution. These kits integrate a multi-sense converter, programmable analog blocks, and a high-voltage (12V) LDO. Typical applications include steering wheel switches, hands-on detection systems, and LED lighting.
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Taiwan Semiconductor BZX84 SemiconductorsDescription
Taiwan Semiconductor BZX84 Surface Mount Zener Diodes are AEC-Q101 qualified diodes that are ideally suited for automated assembly processes. These diodes feature a 2.4V to 39V Zener voltage selection range with ±5% tolerance and exhibit 300mW power dissipation. The BZX84 diodes are used in applications that require general regulation functions.
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Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R SemiconductorsDescription
Torex Semiconductor XPJ101N04N8R and XPJ102N09N8R N-channel MOSFETs feature low on-resistance, reducing energy losses and improving overall system efficiency. These MOSFETs are ideal for applications that require high-speed switching characteristics. The XPJ101N04N8R offers on-resistance of 4.4mΩ, while the XPJ102N09N8R offers 9.4mΩ.
