Latest Components
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Category
Nexperia GS1M SemiconductorsDescription
Nexperia GS1M Recovery Rectifier is a 1000V, 1A rectifier with high forward surge capability. This rectifier features a glass passivated chip junction and is ideal for automated placement. The GS1M rectifier offers a good recovery time and is encapsulated in an SOD1001-1 SMA package.
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Nexperia US3M SemiconductorsDescription
Nexperia US3M Ultrafast Recovery Rectifier is a 1000V, 3A rectifier with high forward surge capability. It features a glass passivated chip junction and offers an ultrafast recovery time of ≤75ns. This rectifier is ideal for applications such as rectification, reverse polarity protection, and fast switching.
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Nexperia US1J SemiconductorsDescription
Nexperia US1J Ultrafast Recovery Rectifier is a 600V, 1A rectifier with high forward surge capability. This rectifier features a glass passivated chip junction and is ideal for automated placement. The US1J rectifier offers an ultrafast recovery time of ≤75ns and is encapsulated in an SOD1001-1 SMA package.
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Category
Nexperia US1M SemiconductorsDescription
Nexperia US1M Ultrafast Recovery Rectifier is a 1000V, 1A rectifier with high forward surge capability. It features a glass passivated chip junction and offers an ultrafast recovery time of ≤75ns. This rectifier is ideal for applications such as rectification, reverse polarity protection, and fast switching.
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Nexperia MURS160B SemiconductorsDescription
Nexperia MURS160B Ultrafast Recovery Rectifier is a 600V, 1A rectifier with high forward surge capability. It features a glass passivated chip junction and offers an ultrafast recovery time of ≤50ns. This rectifier is ideal for rectification, reverse polarity protection, fast switching, and freewheeling applications.
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Nexperia GS10M SemiconductorsDescription
Nexperia GS10M Recovery Rectifier is a 1000V, 10A rectifier with high forward surge capability. This rectifier features a glass passivated chip junction and is ideal for automated placement. It is used in rectification, reverse polarity protection, and freewheeling applications.
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Nexperia NXU0101 SemiconductorsDescription
Nexperia NXU0101 1-Bit Dual-Supply Buffer/Level Translators facilitate communication between different voltage domains with a wide supply voltage range from 0.9V to 5.5V. They feature a Schmitt-trigger input and a maximum data rate of 250Mbps, ensuring high-speed performance. Designed for low power consumption, these translators are ideal for various applications requiring reliable voltage level translation.
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Nexperia NXU0202 SemiconductorsDescription
Nexperia NXU0202 2-Bit Dual-Supply Buffer/Level Translators enable communication between different voltage domains with Schmitt-trigger inputs and 3-state outputs. They support a wide supply voltage range from 0.9V to 5.5V and a maximum data rate of 250Mbps. Designed for low power consumption, these devices ensure reliable operation in partial power-down applications.
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Nexperia NXU0102 SemiconductorsDescription
Nexperia NXU0102 2-Bit Dual-Supply Buffer/Level Translators are designed to facilitate communication between different voltage domains. They feature Schmitt-trigger inputs and 3-state outputs, ideal for asynchronous data transfer, supporting a wide supply voltage range from 0.9V to 5.5V. With a maximum data rate of 250Mbps, these translators ensure high-speed performance while maintaining low power consumption.
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Micro Commercial Components (MCC) MCG4D8N04Y SemiconductorsDescription
Micro Commercial Components (MCC) MCG4D8N04Y 40V Low RDS(on) N-Channel MOSFETs utilize Split Gate Trench (SGT) technology, offering a maximum RDS(on) of 4.8mΩ in a compact PDFN3333 package. These MOSFETs are designed for high efficiency and can operate in extreme temperatures ranging from -55°C to 175°C. They are suitable for various applications including Battery Management Systems, motor drives, and solar inverters.
