Latest Components
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Avnet XRF16 Gen3 SOM SemiconductorsDescription
The Avnet XRF16 Gen3 SOM is a compact, low-power system-on-module featuring the AMD Zynq UltraScale+ RFSoC Gen3 ZU49DR. It offers 16 RF-ADC and 16 RF-DAC channels with up to 6GHz analog bandwidth, ideal for real-time RF processing. The module is designed for integration into advanced RF systems requiring high-speed data transfer and robust synchronization.
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AMD (Avnet) XRF8 Gen3 SOM SemiconductorsDescription
The XRF8 Gen3 SOM is a production-ready 8x8 direct-RF sampling module featuring the AMD Zynq UltraScale+ RFSoC Gen 3 ZU47DR, supporting 8 RF-ADC and 8 RF-DAC channels with up to 6 GHz analog bandwidth. It is designed for integration into RF systems requiring a small footprint, low power, and real-time processing. The module includes advanced features such as soft-decision forward error correction (SD-FEC), high-speed data transfer, and robust synchronization options.
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AMD XRF16 Gen2 SOM SemiconductorsDescription
The Avnet XRF16 Gen2 RFSoC System-on-Module integrates the AMD Zynq UltraScale+ RFSoC Gen 2, offering 16 RF-ADC and 16 RF-DAC channels for high-speed direct-RF sampling up to 6GHz analog bandwidth. It is designed for compact, low-power, real-time RF systems and supports rapid prototyping with a carrier card and software suite. Ideal for applications such as phased array radar, 5G MIMO, and medical imaging.
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Otava OTSW100 SemiconductorsDescription
The OTSW100 is a wideband SPDT RF switch operating from DC to 40 GHz, featuring low insertion loss, high isolation, fast switching time, and high linearity. It is ideal for wireless infrastructure, aerospace & defense, satellite communication, instrumentation, and automotive applications. The switch uses SOI technology and is available in a flip chip C4 bump die format.
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Otava OTSW101 SemiconductorsDescription
The OTSW101 is a wideband SPDT RF switch operating from DC to 40 GHz, featuring low insertion loss, high isolation, and fast switching time. Its small form factor is ideal for space-constrained applications such as millimeter wave phased arrays. Suitable for wireless infrastructure, aerospace & defense, satellite communication, instrumentation, and automotive platforms.
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Microchip Technology MRH25N12U3 SemiconductorsDescription
The MRH25N12U3 is a radiation-hardened 250V N-channel MOSFET designed for aerospace and space applications. It features low RDS(on), fast switching, and is single-event hardened to withstand harsh space environments. This device is ideal for power conversion circuits, DC-DC converters, and motor control in demanding conditions.
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STMicroelectronics STM32WB15CC SemiconductorsDescription
The STM32WB15CC is an ultra-low-power, dual-core microcontroller featuring an Arm Cortex-M4 and Cortex-M0+ core, integrated Bluetooth LE 5.3 radio, and advanced security features. It offers 320 KB Flash, 48 KB SRAM, and a wide range of analog and digital peripherals for wireless and IoT applications. Designed for efficiency, it supports multiple power-saving modes and robust wireless connectivity.
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STMicroelectronics TSC212 SemiconductorsDescription
The TSC212 is a high-precision, zero-drift current sense amplifier capable of sensing current via a shunt resistor over a wide common mode voltage range from -0.3V to +26V. It features a gain of 1000 V/V, low offset voltage, and operates from a 2.7V to 26V supply. Ideal for precision current measurement, overcurrent protection, and current monitoring applications.
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STMicroelectronics M95M04-DR SemiconductorsDescription
The M95M04-DR is a 4-Mbit electrically erasable programmable memory (EEPROM) accessed via an SPI bus. It operates from 1.8V to 5.5V and is rated for over 4 million write cycles per byte. The device is ideal for flexible data logging and long-term data retention in industrial and embedded applications.
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STMicroelectronics SCTWA90N65G2V-4 SemiconductorsDescription
This silicon carbide Power MOSFET features 650 V blocking voltage, 18 mOhm typical on-resistance, and 119 A current capability in a HiP247-4 package. It offers low on-resistance per unit area, excellent switching performance, and minimal variation of switching loss with temperature. The device is ideal for high-speed, high-efficiency power conversion applications.
