Latest Components
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Nexperia US1M SemiconductorsDescription
Nexperia US1M Ultrafast Recovery Rectifier is a 1000V, 1A rectifier with high forward surge capability. It features a glass passivated chip junction and offers an ultrafast recovery time of ≤75ns. This rectifier is ideal for applications such as rectification, reverse polarity protection, and fast switching.
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Nexperia MURS160B SemiconductorsDescription
Nexperia MURS160B Ultrafast Recovery Rectifier is a 600V, 1A rectifier with high forward surge capability. It features a glass passivated chip junction and offers an ultrafast recovery time of ≤50ns. This rectifier is ideal for rectification, reverse polarity protection, fast switching, and freewheeling applications.
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Nexperia GS10M SemiconductorsDescription
Nexperia GS10M Recovery Rectifier is a 1000V, 10A rectifier with high forward surge capability. This rectifier features a glass passivated chip junction and is ideal for automated placement. It is used in rectification, reverse polarity protection, and freewheeling applications.
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Nexperia NXU0101 SemiconductorsDescription
Nexperia NXU0101 1-Bit Dual-Supply Buffer/Level Translators facilitate communication between different voltage domains with a wide supply voltage range from 0.9V to 5.5V. They feature a Schmitt-trigger input and a maximum data rate of 250Mbps, ensuring high-speed performance. Designed for low power consumption, these translators are ideal for various applications requiring reliable voltage level translation.
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Nexperia NXU0202 SemiconductorsDescription
Nexperia NXU0202 2-Bit Dual-Supply Buffer/Level Translators enable communication between different voltage domains with Schmitt-trigger inputs and 3-state outputs. They support a wide supply voltage range from 0.9V to 5.5V and a maximum data rate of 250Mbps. Designed for low power consumption, these devices ensure reliable operation in partial power-down applications.
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Nexperia NXU0102 SemiconductorsDescription
Nexperia NXU0102 2-Bit Dual-Supply Buffer/Level Translators are designed to facilitate communication between different voltage domains. They feature Schmitt-trigger inputs and 3-state outputs, ideal for asynchronous data transfer, supporting a wide supply voltage range from 0.9V to 5.5V. With a maximum data rate of 250Mbps, these translators ensure high-speed performance while maintaining low power consumption.
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Micro Commercial Components (MCC) MCG4D8N04Y SemiconductorsDescription
Micro Commercial Components (MCC) MCG4D8N04Y 40V Low RDS(on) N-Channel MOSFETs utilize Split Gate Trench (SGT) technology, offering a maximum RDS(on) of 4.8mΩ in a compact PDFN3333 package. These MOSFETs are designed for high efficiency and can operate in extreme temperatures ranging from -55°C to 175°C. They are suitable for various applications including Battery Management Systems, motor drives, and solar inverters.
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ROHM Semiconductor ML63Q2537 & ML63Q2557 SemiconductorsDescription
ROHM Semiconductor ML63Q2537 and ML63Q2557 Microcontrollers are equipped with a 32-bit Arm Cortex-M0+ processor and an AxlCORE-ODL AI accelerator. These MCUs integrate a CAN FD controller, 3-phase motor control PWM, and various communication interfaces. They are suitable for applications in household appliances, housing equipment, and measurement instrumentation.
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PANJIT 60V Automotive P-Channel MOSFETs SemiconductorsDescription
PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize RDS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers. They are available in a wide range of compact packages, including SOT-23, SOT-23 6L, DFN2020, DFN3333, DFN5060, and TO-252AA.
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Nexperia 74HC1G00/74HCT1G00 SemiconductorsDescription
Nexperia 74HC1G00 and 74HCT1G00 2-Input NAND Gates are designed for a wide range of digital applications with supply voltage ranges from 2.0V to 6.0V for the 74HC1G00 and 4.5V to 5.5V for the 74HCT1G00. These gates provide high noise immunity and low power dissipation, making them suitable for complex circuits. Ideal for logic functions, signal inversion, and timing circuits.
