Latest Components

Nexperia FR2JA Fast Recovery Rectifier

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Nexperia FR2JA Semiconductors

Description

Nexperia FR2JA Fast Recovery Rectifier is a 600V, 2A rectifier with high forward surge capability. This rectifier features a glass passivated chip junction and is ideal for automated placement. It offers a fast recovery time of ≤250ns and operates within a temperature range of -55°C to 150°C.

Nexperia GS10M Recovery Rectifier

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Nexperia GS10M Semiconductors

Description

The Nexperia GS10M Recovery Rectifier is a 1000V, 10A rectifier designed for high forward surge capability. It features a glass passivated chip junction and is suitable for automated placement, with a good recovery time. This rectifier operates within a temperature range of -55°C to 150°C and is ideal for applications such as rectification and reverse polarity protection.

Nexperia FR2M Fast Recovery Rectifier

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Nexperia FR2M Semiconductors

Description

Nexperia FR2M Fast Recovery Rectifier is a 1000V, 2A rectifier with high forward surge capability. It features a glass passivated chip junction and offers a fast recovery time of ≤500ns. This rectifier is ideal for rectification, reverse polarity protection, and freewheeling applications.

onsemi NVTFWS003N04XM MOSFETs

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onsemi NVTFWS003N04XM Semiconductors

Description

The onsemi NVTFWS003N04XM MOSFET provides a low R<sub>DS(on)</sub> and capacitance in an AEC-Q101 qualified package. It features a 40V drain-to-source voltage and 98A continuous drain current, making it ideal for applications like motor drive and battery protection. This MOSFET is offered in a compact 3.3mm x 3.3mm package.

onsemi NVBLS1D2N08X MOSFET

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onsemi NVBLS1D2N08X Semiconductors

Description

The onsemi NVBLS1D2N08X MOSFET features a low QRR, RDS(on), and QG to minimize driver and conduction loss. It is AEC-Q101-qualified for automotive 48V system applications and operates with an 80V drain-to-source voltage and 299A continuous drain current. This device is available in a H-PSOF8L package.

Silicon Labs EFR32BG22L Wireless Gecko SoCs

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Silicon Labs EFR32BG22L Semiconductors

Description

Silicon Labs EFR32BG22L Wireless Gecko SoCs are designed for energy-efficient Bluetooth networking in IoT devices. This single-die solution features a 38.4MHz Cortex-M33 and a high-performance 2.4GHz radio, making it ideal for various applications. With up to 352kB of Flash and 24kB of RAM, it supports low-power operations and secure boot functionality.

Silicon Labs EFR32BG24L Wireless Gecko SoCs

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Silicon Labs EFR32BG24L Semiconductors

Description

The Silicon Labs EFR32BG24L Wireless Gecko SoCs are designed for wireless connectivity using Bluetooth Low Energy and Bluetooth mesh. They feature a high-performance 2.4GHz RF, low current consumption, and an AI/ML hardware accelerator, making them ideal for creating smart and energy-efficient IoT devices. With a Cortex-M33 core, these SoCs provide ample resources for demanding applications.

Texas Instruments AMC0136 Precision Delta-Sigma (ΔΣ) Modulator

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Texas Instruments AMC0136 Semiconductors

Description

The Texas Instruments AMC0136 Precision Delta-Sigma (ΔΣ) Modulator features a ±1V, high impedance input and an external clock, optimized for high-impedance voltage signal sources. It supports a working voltage up to 200VRMS/280VDC and transient overvoltages up to 570VRMS/800VDC, making it suitable for isolated voltage sensing in compact applications. With a small package size and high measurement resolution, it enables precise motor control designs.

Surface Mount PAR® Transient Voltage Suppressors

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Vishay Semiconductors TA6L/TA6F Semiconductors

Description

Vishay Semiconductors TA6L and TA6F Surface Mount PAR® Transient Voltage Suppressors (TVS) are designed for high-temperature stability and high-reliability conditions. These suppressors feature excellent clamping capability and are used to protect sensitive electronic devices such as ICs and MOSFETs from voltage transients. They are RoHS compliant and AEC-Q101 qualified.

40V Low RDS(on) N-Channel MOSFETs

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Micro Commercial Components (MCC) MCG4D8N04Y Semiconductors

Description

Micro Commercial Components (MCC) MCG4D8N04Y 40V Low RDS(on) N-Channel MOSFETs utilize Split Gate Trench (SGT) technology, offering a maximum RDS(on) of 4.8mΩ in a compact PDFN3333 package. These MOSFETs are designed for high efficiency and can operate at junction temperatures up to 175°C. They are suitable for various applications including Battery Management Systems, motor drives, and inverter systems.

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