Latest Components
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Schurter DG11 PowerDescription
Schurter DG11 Power Entry Modules include a thermo-magnetic circuit breaker type TA35 according to the IEC 60934 standard. These modules are designed to avoid potential damage to equipment caused by increased short-circuit protection. Typical applications include data centers, medical electronics, and industrial automation.
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Abracon AMELH4025S PowerDescription
Abracon AMELH4025S Power Inductors are flat wire/hot-press molded power inductors with inductance ranging from 0.13μH to 4.7μH. These inductors feature low DCR, high saturation current, and ultra-low AC losses, making them suitable for various applications. They provide improved efficiency and thermal performance, supporting higher load currents and superior EMI suppression.
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Abracon AMELH4030S PassivesDescription
Abracon AMELH4030S Power Inductors are flat wire/hot-press molded power inductors with inductance ranging from 0.13μH to 8.2μH. These inductors feature low DCR, high saturation current, and ultra-low AC losses, making them suitable for consumer electronics, industrial electronics, and telecom equipment. They provide improved efficiency and thermal performance, supporting higher load currents and superior EMI suppression.
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Abracon ASH5KW PassivesDescription
Abracon ASH5KW Low-Power Crystal Oscillators operate at 32.768kHz frequency with a CMOS output and ±20ppm frequency tolerance. They feature low current consumption and a supply voltage range of 1.6V to 5.5V. Ideal for IoT, consumer electronics, and industrial applications, these oscillators come in a compact hermetically sealed ceramic package.
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Renesas Electronics FPB-RA2T1 PowerDescription
The Renesas Electronics FPB-RA2T1 Fast Prototyping Board is a versatile development platform built around the RA2T1 32-bit Arm Cortex-M23 microcontroller. It features a built-in E2 emulator Lite for seamless programming and debugging, along with Arduino Uno and Pmod interfaces for broad expandability. This board is ideal for rapid evaluation and embedded system development.
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ROHM Semiconductor RxL120BLFRA PowerDescription
ROHM Semiconductor RxL120BLFRA Power MOSFETs are automotive-grade MOSFETs that are AEC-Q101 qualified. They feature a 60V drain source breakdown voltage and 30mΩ static drain source on-state resistance, making them suitable for various automotive applications. Ideal for ADAS, infotainment, lighting, and body systems.
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ROHM Semiconductor RxP120BLFRA PowerDescription
ROHM Semiconductor RxP120BLFRA Power MOSFETs are automotive-grade MOSFETs that are AEC-Q101 qualified. The devices supply 100V drain-source breakdown voltage, 62mΩ static drain-source on-state resistance, and ±12A continuous drain current. They are ideal for automotive applications, including ADAS, infotainment, lighting, and body.
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ROHM Semiconductor RF302LB2S SemiconductorsDescription
ROHM Semiconductor RF302LB2S Super Fast Recovery Diode offers low forward voltage and switching losses in a DO-214AA package. The device has a 200V reverse voltage, 80A peak forward surge current, and 3A average rectified forward current. The ROHM RF302LB2S is ideal for general rectification applications.
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ROHM Semiconductor BD9xND-C PowerDescription
ROHM Semiconductor Nano Cap BD9xND-C LDO Regulators utilize Nano Cap™ topology, designed for low-current-consumption in automotive applications. They support output currents up to 500mA with a low quiescent current of 25μA and provide high output voltage accuracy of ±2.0%. The regulators feature integrated overcurrent protection and thermal shutdown for enhanced reliability.
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Infineon Technologies FF06MR12A04MA2 PowerDescription
Infineon Technologies HybridPACK™ DSC S Modules with SiC MOSFET and NTC are high-performance power modules designed for demanding automotive applications, particularly in hybrid and electric vehicles (xEVs). This compact half-bridge module integrates silicon carbide (SiC) MOSFETs and an NTC thermistor, enabling superior efficiency and thermal performance. With a blocking voltage of 1200V and a nominal current rating of 190A, the modules support high-speed switching with low conduction and switching losses.
