Latest Components
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STMicroelectronics LDK320 PowerDescription
The LDK320 is a low-dropout voltage regulator capable of delivering up to 200 mA from an input voltage of 2.5 V to 18 V, with a typical dropout voltage of 100 mV. It features low quiescent current, high PSRR, and is suitable for low power battery-powered applications. The device includes enable logic control, short-circuit current limiting, and thermal protection.
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STMicroelectronics TSZ121 SemiconductorsDescription
The TSZ121 is a single, high-precision operational amplifier featuring ultra-low input offset voltage (5 μV max) and zero drift over temperature. It offers rail-to-rail input/output, low power consumption, and a 400 kHz gain bandwidth product, making it ideal for sensor interfaces and battery-powered applications. Its high accuracy and stability suit automotive, industrial, and portable designs.
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STMicroelectronics TSZ181H1/TSZ182H1 SemiconductorsDescription
The TSZ181H1 (single) and TSZ182H1 (dual) are automotive-grade, high-accuracy, zero-drift operational amplifiers with a 3 MHz bandwidth and ultra-low offset voltage. They feature rail-to-rail input/output, low power consumption, and operate over a wide temperature range up to 175°C. Ideal for high-accuracy, high-bandwidth sensor interfaces in automotive environments.
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STMicroelectronics TSZ181H SemiconductorsDescription
The TSZ181H is an automotive-grade, high-accuracy operational amplifier featuring a maximum offset voltage of 25 µV and a 3 MHz gain bandwidth. It offers rail-to-rail input/output, low power consumption, and operates over a wide temperature range up to 150°C. This op amp is ideal for high-accuracy, high-bandwidth sensor interfaces in demanding automotive environments.
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STMicroelectronics TSB612 SemiconductorsDescription
The TSB612 is a low power, rail-to-rail output operational amplifier with an extended supply voltage range up to 36V. It offers high accuracy, low offset voltage, and excellent speed-to-power consumption ratio, making it ideal for industrial and automotive applications. Its compact package allows for use in space-constrained designs.
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STMicroelectronics LDO40L PowerDescription
The LDO40L is a 400 mA, 38 V low-dropout linear regulator with ultra-low quiescent current, designed for automotive, industrial, and consumer applications. It features protection functions such as current limit and thermal shutdown, and supports both adjustable and fixed output voltages. Its wide input voltage range and robust design make it suitable for harsh environments.
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STMicroelectronics TN3050H-12WY SemiconductorsDescription
The TN3050H-12WY is a 1200 V, 30 A automotive grade SCR Thyristor designed for demanding applications such as on-board chargers and AC relays. It offers high surge current capability and robust voltage performance for reliable power switching. The device is AEC-Q101 qualified and housed in a TO-247 package.
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STMicroelectronics STW75N60DM6 SemiconductorsDescription
The STW75N60DM6 is a high voltage N-channel Power MOSFET featuring fast recovery, low RDS(on), and high efficiency switching. It is designed for demanding high-efficiency bridge topologies and ZVS phase-shift converters. The device comes in a TO-247 package and is part of the MDmesh DM6 series.
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STMicroelectronics STSAFE-A110 SemiconductorsDescription
The STSAFE-A110 is a secure element designed for authentication and secure data management in IoT, smart home, and industrial devices. It features advanced cryptographic capabilities, secure key storage, and a secure operating system on a robust microcontroller. The device supports I2C communication and is ideal for applications requiring high security and authentication.
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STMicroelectronics STPSC20H12 SemiconductorsDescription
The STPSC20H12 is a high-performance 1200 V, 20 A silicon carbide Schottky power diode designed for hard switching and PFC applications. It features negligible reverse recovery, robust high voltage capability, and temperature-independent switching behavior. Its silicon carbide substrate enables low forward voltage and high surge capability for enhanced robustness.
