STMicroelectronics has introduced seven new 700V GaN power transistors aimed at higher-density power conversion in AI servers, robotics, industrial systems, smart-grid equipment, and advanced consumer electronics. The additions expand the company’s STPOWER PowerGaN portfolio with enhancement-mode HEMTs covering current ratings from 6 A to 29 A.
The new devices are designed for high-voltage power stages where switching efficiency and thermal behavior increasingly limit how compact a converter can become. ST says the 700V parts can either replace conventional silicon MOSFETs in existing designs or support higher-frequency topologies that reduce the size of surrounding magnetics and passive components.
The lineup includes the SGT350R70GTK, SGT070R70HTO, and five PowerFLAT variants covering a range of current and on-resistance combinations.
700V GaN Devices For Higher Switching Frequencies
The new PowerGaN devices use enhancement-mode GaN HEMT structures with low gate charge, low internal capacitance, and zero reverse-recovery charge characteristics typical of wide-bandgap switching devices. ST specifies continuous current ratings between 6 A and 29 A, with typical RDS(on) values ranging from 53 mΩ to 270 mΩ depending on the device.
The company says the devices provide a Qg × RDS(on) figure of merit ahead of conventional silicon alternatives. In practical power stages, lower gate charge and switching loss become increasingly useful once converter frequencies rise and thermal budgets tighten. Higher switching frequencies can also reduce the size of inductors, transformers, and other passive components in the wider converter design.
Package Options Across Multiple Power Levels
ST is offering the new devices in DPAK, TO-LL, and PowerFLAT surface-mount packages. The SGT350R70GTK is supplied in a 3-pin DPAK package and is rated at 6 A with 270 mΩ typical RDS(on). At the higher end of the range, the SGT070R70HTO uses a leadless TO-LL package and supports 26 A with 53 mΩ typical RDS(on). The remaining devices are housed in PowerFLAT 8×8 packages with solderable source pads intended to improve thermal performance. Current ratings across those variants range from 10 A through to 29 A.
Kelvin Source Connections For Fast Switching Stages
The TO-LL and PowerFLAT devices also include Kelvin source connections separating the gate-control path from the main power current path. In fast-switching converter designs, that separation helps reduce the effect of parasitic inductance and switching noise on the gate driver itself. Preserving cleaner switching timing becomes more important as switching edges become faster and converter layouts more compact.
ST says the devices are intended for high-voltage power supplies in applications including AI servers, robotics, industrial power systems, smart-grid converters, and home appliances.
The new 700V PowerGaN devices are already in production and available through ST distribution channels.
Learn more and read the original announcement at www.st.com
Technology Overview
STMicroelectronics’ new 700V PowerGaN devices are enhancement-mode GaN HEMTs for high-voltage power conversion. The seven devices cover continuous current ratings from 6 A to 29 A with typical RDS(on) values between 53 mΩ and 270 mΩ.
The devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages. TO-LL and PowerFLAT versions include Kelvin source connections for improved switching behavior in fast-switching power stages.
Frequently Asked Questions
What applications are ST’s new 700V PowerGaN devices intended for?
The devices are designed for AI server power supplies, robotics, industrial power systems, smart-grid converters, and advanced consumer power applications.
What current range do the new PowerGaN devices cover?
The new devices support continuous current ratings from 6 A to 29 A depending on the package and part number.
Which package types are available?
The 700V PowerGaN devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages.
You may also like
