Toshiba Launches 3300 V SiC MOSFET Module with 300 kA²s Surge Rating

Toshiba has launched the IX800FXF2YMS4, a dual SiC MOSFET module rated at 3300 V and 800 A for high-power industrial equipment.

The new module uses Toshiba’s improved third-generation silicon carbide MOSFET technology and is aimed at applications including railway inverters and converters, solid-state transformers, uninterruptible power supplies, energy storage systems and industrial motor control.

A key part of the design is its surge-current capability. The module has an I²t rating of 300 kA²s for its diode under Toshiba’s specified test conditions, including an initial channel temperature of 175°C and a single 10 ms half-sinewave pulse. Toshiba says the optimized SiC MOSFET design behind that figure is intended to support more reliable operation under abnormal conditions.

High-Voltage SiC with Low Conduction and Switching Losses

Alongside the surge-current capability, Toshiba has focused on reducing both conduction and switching losses.

The IX800FXF2YMS4 has a typical VDS(on)sense of 1.4 V at 800 A, with VGS at +20 V and a channel temperature of 25°C. Typical turn-on and turn-off switching losses are 185 mJ and 175 mJ respectively, measured at 1800 V, 800 A and a channel temperature of 175°C.

These characteristics are intended to improve efficiency in high-power conversion systems while reducing the amount of heat that needs to be removed from the module.

iXPLV Package with Silver-Sintered Die Attach

The module is housed in Toshiba’s iXPLV package, which uses silver sintering for the die attach.

Toshiba says the Ag-sintered construction improves heat resistance and reliability, supporting a maximum channel temperature of 175°C. The new device expands the company’s iXPLV SiC MOSFET module line-up to four products.

With its 3300 V rating, 800 A current capability and 300 kA²s diode I²t figure, the IX800FXF2YMS4 is targeted at systems where both high power density and resilience under abnormal operating conditions are important.

Learn more and read the original announcement at toshiba.semicon-storage.com.

Technology Overview

The Toshiba IX800FXF2YMS4 is a 3300 V, 800 A dual SiC MOSFET module using third-generation silicon carbide devices. It offers a diode I²t rating of 300 kA²s, low conduction and switching losses, and a 175°C channel temperature rating in Toshiba’s iXPLV package with silver-sintered die attach.

FAQs

What is the voltage and current rating of the IX800FXF2YMS4?

The module is rated at 3300 V drain-source voltage and 800 A drain current.

What is the surge-current capability of the module?

Toshiba specifies a diode I²t rating of 300 kA²s under its stated test conditions, including a 175°C initial channel temperature and a single 10 ms half-sinewave pulse.

Where is the IX800FXF2YMS4 intended to be used?

Applications include railway inverters and converters, solid-state transformers, UPS systems, energy storage systems and industrial motor-control equipment.