100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN Transistor


100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN Transistor

Manufacturer

Part #

Category

STMicroelectronics SGT3D5R10MEB Semiconductors

Description

The SGT3D5R10MEB is a 100 V enhancement-mode N-channel GaN FET with 3.5 mOhm on-resistance and 201 A continuous drain current. It features an FCLGA-8 surface-mount package and is designed for high-power switching applications.


STMicroelectronics SGT3D5R10MEB PowerGaN Transistor

Introduction

The STMicroelectronics SGT3D5R10MEB is a high-performance enhancement-mode gallium nitride (GaN) power transistor designed for fast, efficient switching in demanding power-conversion systems. Its 100 V drain-source rating, very low on-resistance, and high current capability make it suitable for compact designs where conduction and switching losses must be minimized.

Part Description

The SGT3D5R10MEB is an N-channel, enhancement-mode PowerGaN FET in an FCLGA-8 surface-mount package. It supports up to 100 V operation and is specified for continuous drain currents up to 201 A.

With a milliohm-range on-resistance—listed as 2.9 mΩ typical in the product title and 3.5 mΩ in the product description—the device is intended to reduce conduction losses in high-current switching paths. As a GaN-based transistor, it is suited to high-frequency switching designs that benefit from improved efficiency, smaller magnetic components, and reduced system size compared with many conventional silicon-based alternatives.

Key characteristics include:

  • 100 V drain-source voltage rating
  • Enhancement-mode N-channel GaN technology
  • Up to 201 A continuous drain current capability
  • Low milliohm-class on-resistance
  • FCLGA-8 surface-mount package
  • Intended for high-power and high-speed switching applications

Applications

Potential applications for the SGT3D5R10MEB include:

  • Synchronous buck converters
  • Point-of-load power converters
  • DC-DC converters
  • High-current voltage-regulator modules
  • Battery-powered power-management systems
  • Class-D audio amplifiers
  • Motor-drive power stages
  • Low-voltage inverter stages
  • Solar-power conversion equipment
  • Telecom and data-center power supplies
  • Robotics power systems
  • Electric mobility power electronics

Industries

This transistor can be useful in the following industries:

  • Consumer electronics
  • Industrial automation
  • Automotive and electric mobility
  • Telecommunications
  • Data centers and cloud infrastructure
  • Renewable energy
  • Robotics
  • Aerospace and defense
  • Medical equipment
  • Test and measurement

Usage Ideas

  1. High-Current Buck Converter
    Build a compact 48 V-to-low-voltage synchronous buck converter for processors, FPGAs, or high-current digital loads.

  2. Efficient Motor Controller
    Use the device in a low-voltage motor-drive stage for robotics, fans, pumps, or electric tools where efficient switching is important.

  3. Compact Battery Power Module
    Design a battery-powered DC-DC conversion stage for portable industrial equipment or electric mobility subsystems.

Conclusion

The STMicroelectronics SGT3D5R10MEB is a 100 V enhancement-mode GaN power transistor designed for high-current, low-loss switching applications. Its low on-resistance, 201 A current capability, and compact surface-mount package make it a strong option for designers developing efficient power converters, motor controls, and other advanced power-electronics systems.