Infineon EVAL_GD_BDS_GAN Evaluation Board

Introduction

The Infineon EVAL_GD_BDS_GAN is a low-power evaluation board intended for testing and validating gallium nitride (GaN) bidirectional switch designs. It provides a practical platform for evaluating gate-drive behavior in systems operating at voltages up to 120 V.

Part Description

The EVAL_GD_BDS_GAN is built around Infineon’s EiceDRIVER 1EDB7275F isolated gate driver. This driver architecture supports the controlled operation of GaN bidirectional switches while providing galvanic isolation between the control-side input and the power-side gate-drive circuitry.

A key feature of the board is compatibility with interchangeable CoolGaN BDS daughter cards. This modular approach enables designers to evaluate different bidirectional switch options without redesigning the main gate-driver board. The platform is suited to studying switching behavior, control timing, gate-drive performance, and integration considerations before committing to a production hardware design.

Applications

Potential applications for the EVAL_GD_BDS_GAN include:

• Evaluation of GaN bidirectional switch gate-drive circuits
• Bidirectional power-switching experiments
• Solid-state relay development
• AC switching and power-routing prototypes
• Power-conversion topology validation
• Switching-performance characterization at up to 120 V
• Control and isolation testing for GaN-based power stages
• CoolGaN BDS daughter-card comparison and selection

Industries

Industries that may use this evaluation board include:

• Power electronics
• Industrial automation
• Renewable energy
• Energy storage systems
• Electric mobility
• Consumer electronics
• Telecommunications infrastructure
• Test and measurement
• Research and academic laboratories
• Building and energy-management systems

Usage Ideas

1. Solid-State Relay Prototype
   Use the board with a compatible CoolGaN BDS daughter card to investigate a compact, fast-switching solid-state relay for low-voltage AC or DC loads.

2. Bidirectional Battery Switching Test
   Evaluate bidirectional switching behavior for battery disconnect, protection, or energy-routing functions in a low-voltage energy-storage system.

3. GaN Gate-Drive Characterization Setup
   Measure switching waveforms, propagation delay, and gate-drive response under different operating conditions to support a custom GaN power-stage design.

Conclusion

The Infineon EVAL_GD_BDS_GAN evaluation board offers a flexible development platform for engineers exploring GaN bidirectional switch technology. With its isolated EiceDRIVER 1EDB7275F gate driver and support for interchangeable CoolGaN BDS daughter cards, it helps accelerate design evaluation, switching analysis, and validation of power applications up to 120 V.