Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
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Nexperia GANB1R2-040QBA & GANB012-040CBA PowerDescription
Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs are 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs). The GANB1R2-040QBA features a Very-Thin-Profile Quad Flat No-Lead package, while the GANB012-040CBA is available in a Wafer-Level Chip Scale package. Both devices deliver superior performance with ultra-low on-state resistance.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
Introduction
The Nexperia GANB1R2-040QBA and GANB012-040CBA are advanced Gallium Nitride (GaN) High Electron-Mobility Transistors (HEMTs) designed for high-performance power applications. With their bi-directional capabilities and ultra-low on-state resistance, these transistors are ideal for a variety of demanding electronic circuits.
Part Description
The Nexperia GANB1R2-040QBA and GANB012-040CBA are both rated for 40V operation and feature very low on-state resistances of 1.2mΩ and 12mΩ, respectively. The GANB1R2-040QBA is housed in a Very-Thin-Profile Quad Flat No-Lead (VQFN) package, while the GANB012-040CBA comes in a Wafer-Level Chip Scale Package (WLCSP). Both devices are enhancement mode, normally-off power switches that deliver superior performance with high efficiency and power density, making them suitable for fast switching applications.
Applications
- High-side load switches
- Overvoltage protection (OVP) in smartphone USB ports
- Power switch circuits
- Standby power systems
Industries
- Consumer electronics
- Telecommunications
- Automotive
- Industrial automation
- Renewable energy systems
Usage Ideas
- Smartphone Charger Protection: Utilize the GANB012-040CBA in a smartphone charger circuit to provide overvoltage protection, ensuring device safety during charging.
- High-Efficiency Power Supply: Design a compact power supply circuit using the GANB1R2-040QBA to achieve high efficiency and low heat generation in consumer electronics.
- Automotive Power Management: Implement the GANB1R2-040QBA in an automotive application for high-side load switching, enhancing the reliability and efficiency of power management systems.
Conclusion
The Nexperia GANB1R2-040QBA and GANB012-040CBA GaN HEMTs represent a significant advancement in power transistor technology. Their low on-state resistance, high efficiency, and compact packaging make them suitable for a wide range of applications across various industries. Whether for consumer electronics, automotive, or industrial applications, these devices are poised to deliver exceptional performance and reliability.
