Qorvo QPD1004A GaN Input Matched Transistors
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Qorvo QPD1004A SemiconductorsDescription
The Qorvo QPD1004A GaN Input Matched Transistors are 25W discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) designed for operation from 30MHz to 1400MHz on a 50V supply rail. They feature an integrated input matching network for wideband gain and power performance, making them ideal for base stations, radar, and communications applications. These devices come in a compact 6mm x 5mm x 0.85mm surface-mount DFN package.
Qorvo QPD1004A GaN Input Matched Transistors
Introduction
The Qorvo QPD1004A is a high-performance GaN (Gallium Nitride) transistor designed for a variety of demanding applications. With its ability to operate over a wide frequency range and its compact size, this transistor is an excellent choice for modern communication systems and radar technologies.
Part Description
The Qorvo QPD1004A GaN Input Matched Transistor is a 25W discrete High Electron Mobility Transistor (HEMT) built on Silicon Carbide (SiC). It operates efficiently from 30MHz to 1400MHz on a 50V supply rail. One of its standout features is the integrated input matching network, which enhances wideband gain and power performance. The transistor is housed in a compact 6mm x 5mm x 0.85mm surface-mount DFN package, making it suitable for space-constrained applications. It supports both continuous wave (CW) and pulsed modes of operation, making it versatile for various uses.
Applications
- Military radar systems
- Land mobile and military radio communications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Industries
- Telecommunications
- Defense and Aerospace
- Test and Measurement
- Consumer Electronics
- Industrial Automation
Usage Ideas
- Base Station Amplifier: Utilize the QPD1004A to design a high-efficiency amplifier for a base station, enhancing signal strength and coverage in mobile communication networks.
- Radar System Development: Implement the transistor in a radar system prototype to improve detection capabilities and range, particularly for military applications.
- Signal Jamming Device: Create a jamming device for testing purposes, using the QPD1004A to generate powerful signals that can disrupt communication systems in a controlled environment.
Conclusion
The Qorvo QPD1004A GaN Input Matched Transistor is a powerful and versatile component that meets the needs of various high-frequency applications. Its robust design and integrated features make it an ideal choice for industries ranging from telecommunications to defense. Whether for amplifiers, radar systems, or other innovative projects, the QPD1004A stands out as a reliable solution for modern electronic designs.
