ROHM Semiconductor AG508EGD3 -40V -40A P-Channel Power MOSFET
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ROHM Semiconductor AG508EGD3 PowerDescription
The ROHM Semiconductor AG508EGD3 is an automotive-grade P-Channel Power MOSFET with a drain-source voltage rating of -40V and a continuous drain current of ±40A. It features a low on-resistance of 0.024Ω at VGS=4.5V and is AEC-Q101 qualified, making it suitable for automotive applications. This component comes in a TO-252 (DPAK) package and is Pb-free and RoHS-compliant.
ROHM Semiconductor AG508EGD3 -40V -40A P-Channel Power MOSFET
Introduction
The ROHM Semiconductor AG508EGD3 is a high-performance P-Channel Power MOSFET designed for automotive applications. With its robust specifications and AEC-Q101 qualification, this component is engineered to meet the demanding requirements of modern automotive systems.
Part Description
The AG508EGD3 features a drain-source voltage rating of -40V and a continuous drain current capability of ±40A, making it suitable for a variety of power management tasks. It boasts a low on-resistance of 0.024Ω at a gate-source voltage (VGS) of 4.5V, which enhances efficiency and reduces heat generation during operation. Packaged in a TO-252 (DPAK) format, this MOSFET is both Pb-free and RoHS-compliant, ensuring it meets environmental standards. Its 100% avalanche testing further guarantees reliability in critical applications.
Applications
- Automotive power management systems
- Motor control circuits
- Battery management systems
- Power supply circuits
- Load switching applications
Industries
- Automotive
- Consumer electronics
- Industrial automation
- Renewable energy systems
- Telecommunications
Usage Ideas
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Electric Vehicle Power Management: Utilize the AG508EGD3 in an electric vehicle's battery management system to efficiently control power distribution and enhance overall energy efficiency.
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Motor Driver Circuit: Design a motor driver circuit for an automated robotic arm, leveraging the low on-resistance characteristics of the MOSFET to improve performance and reduce thermal issues.
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Solar Power Inverter: Implement the AG508EGD3 in a solar power inverter circuit to manage the conversion of DC to AC power, ensuring reliable operation under varying load conditions.
Conclusion
The ROHM Semiconductor AG508EGD3 P-Channel Power MOSFET is a versatile and reliable component ideal for automotive and industrial applications. Its robust specifications, low on-resistance, and AEC-Q101 qualification make it a preferred choice for engineers looking to enhance the performance and efficiency of their designs. Whether in electric vehicles, motor control, or renewable energy systems, the AG508EGD3 stands out as a dependable solution for modern power management challenges.