Qorvo QPD1014A GaN Input Matched Transistors
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Qorvo QPD1014A SemiconductorsDescription
Qorvo QPD1014A GaN Input Matched Transistors are 15W (P3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT), operating from 30MHz to 1.2GHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the compact package is ideal for space-constrained handheld radios.
Qorvo QPD1014A GaN Input Matched Transistors
Introduction
The Qorvo QPD1014A GaN Input Matched Transistor is a high-performance semiconductor component designed for a variety of applications requiring efficient power amplification. With its advanced Gallium Nitride (GaN) technology, this transistor operates effectively across a wide frequency range, making it a valuable asset in modern communication systems.
Part Description
The Qorvo QPD1014A is a 15W (P3dB), 50Ω input matched discrete High Electron Mobility Transistor (HEMT) built on Silicon Carbide (SiC). It operates within a frequency range of 30MHz to 1.2GHz while being powered by a 50V supply rail. The integrated input matching network enhances wideband gain and power performance, making it suitable for applications where space is at a premium. The compact 6mm x 5mm x 0.85mm leadless surface-mount package is particularly advantageous for handheld radios and other space-constrained devices.
Applications
- Base stations
- Active antennas
- Military radar systems
- Civilian radar applications
- Land mobile and radio communications
- Jammers
Industries
- Telecommunications
- Defense and Aerospace
- Automotive
- Consumer Electronics
- Industrial Automation
Usage Ideas
- Base Station Amplifier: Utilize the QPD1014A in a base station design to enhance signal strength and coverage for mobile communication networks.
- Active Antenna Systems: Implement the transistor in active antenna designs to improve performance in radar and communication systems, ensuring efficient signal transmission and reception.
- Portable Communication Devices: Create a compact handheld radio or communication device that leverages the QPD1014A's high power and efficiency to deliver reliable performance in the field.
Conclusion
The Qorvo QPD1014A GaN Input Matched Transistor is a versatile and powerful component ideal for a range of applications in telecommunications and defense. Its compact design, high efficiency, and wide frequency range make it an excellent choice for modern electronic systems, particularly where space and performance are critical. Whether in base stations or portable devices, the QPD1014A is poised to meet the demands of today's high-performance communication technologies.