IXYS IXSJxN120R1K 1200V SiC Power MOSFETs


IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

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IXYS IXSJxN120R1K Power

Description

The IXYS IXSJxN120R1K 1200V SiC Power MOSFETs feature up to 1200V blocking voltage with low RDS(on) values of 18mΩ or 36mΩ. These MOSFETs offer low gate charge and input capacitance, making them suitable for various applications including EV charging and solar inverters. They provide a flexible gate voltage range and are designed for high-performance power conversion.

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

Introduction

The IXYS IXSJxN120R1K is a high-performance 1200V Silicon Carbide (SiC) Power MOSFET designed for demanding power conversion applications. With its low on-resistance and gate charge characteristics, this component is ideal for various high-efficiency applications.

Part Description

The IXYS IXSJxN120R1K features a blocking voltage of up to 1200V and offers low RDS(on) values of 18mΩ or 36mΩ, depending on the specific model. It boasts a low gate charge of 79nC for the IXSJ43N120R1K and 155nC for the IXS80N120R1K, along with low input capacitance of 2453pF and 4556pF, respectively. The device operates within a flexible gate voltage range of 15V to 18V and has a recommended turn-off gate voltage of 0V. With a virtual junction temperature range of -40°C to +150°C, these MOSFETs are built to withstand harsh operating conditions.

Applications

  • Electric Vehicle (EV) charging infrastructures
  • Solar inverters
  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • DC/DC converters
  • Battery chargers
  • Induction heating
  • High-frequency applications

Industries

  • Automotive
  • Renewable Energy
  • Consumer Electronics
  • Industrial Automation
  • Telecommunications
  • Electric Vehicles

Usage Ideas

  1. EV Charging Station: Design a compact and efficient EV charging station using the IXYS IXSJxN120R1K to manage high voltage and current levels while ensuring fast charging capabilities.

  2. Solar Power Inverter: Create a solar inverter that utilizes the IXYS MOSFETs to convert DC from solar panels to AC for home use, optimizing energy conversion efficiency.

  3. Uninterruptible Power Supply (UPS): Develop a UPS system that leverages the low RDS(on) characteristics of the IXYS IXSJxN120R1K to provide reliable power backup for critical electronic devices during outages.

Conclusion

The IXYS IXSJxN120R1K 1200V SiC Power MOSFETs are versatile components that excel in high-performance power conversion applications. With their low on-resistance, low gate charge, and robust thermal characteristics, they are well-suited for industries ranging from automotive to renewable energy. Whether for EV charging, solar inverters, or UPS systems, these MOSFETs provide the efficiency and reliability needed for modern power electronics.