IXYS IXSA80N120L2-7 SiC MOSFET


IXYS IXSA80N120L2-7 SiC MOSFET

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IXYS IXSA80N120L2-7 Power

Description

The IXYS IXSA80N120L2-7 SiC MOSFET is an industrial-grade, single-switch device that offers excellent power cycling characteristics and fast, low-loss switching behavior. It is optimized for gate control and features low conduction losses, making it ideal for applications such as solar inverters and switch-mode power supplies. This MOSFET is designed for high-speed industrial applications, ensuring efficient performance in demanding environments.

IXYS IXSA80N120L2-7 SiC MOSFET

Introduction

The IXYS IXSA80N120L2-7 SiC MOSFET is a high-performance power component designed for industrial applications. With its advanced silicon carbide (SiC) technology, this MOSFET provides exceptional efficiency and reliability, making it a preferred choice for demanding power management tasks.

Part Description

The IXYS IXSA80N120L2-7 is an industrial-grade, single-switch SiC MOSFET that excels in power cycling characteristics and offers fast, low-loss switching behavior. It features a drain-source voltage rating of 1200V and a low on-state resistance of 30mΩ, which contributes to its low conduction losses. The device is optimized for gate control, requiring minimal gate drive power and reducing thermal management efforts. With a maximum virtual junction temperature of 175°C and a total power dissipation capability of 395W at 25°C, this MOSFET is well-suited for high-speed industrial applications.

Applications

  • Solar inverters
  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • DC/DC converters
  • Electric vehicle (EV) charging infrastructure
  • Induction heating

Industries

  • Renewable energy
  • Automotive
  • Industrial automation
  • Consumer electronics
  • Telecommunications
  • Electric vehicles

Usage Ideas

  1. Solar Inverter Design: Utilize the IXYS IXSA80N120L2-7 to create a highly efficient solar inverter that maximizes energy conversion from solar panels to usable electricity.
  2. EV Charging Station: Implement this MOSFET in the power management circuit of an EV charging station to ensure fast and efficient charging with minimal energy loss.
  3. Induction Heating System: Develop an induction heating system that leverages the high-speed switching capabilities of the IXSA80N120L2-7 for precise temperature control in industrial heating applications.

Conclusion

The IXYS IXSA80N120L2-7 SiC MOSFET stands out as a robust and efficient solution for a variety of high-speed industrial applications. Its low conduction losses, high blocking voltage, and fast switching characteristics make it an ideal choice for modern power management systems across multiple industries. Whether in renewable energy, automotive, or industrial automation, this MOSFET is designed to meet the rigorous demands of today's technology.