Latest Components
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Texas Instruments TSDx-Q1 SemiconductorsDescription
Texas Instruments TSDx-Q1 Unidirectional TVS Diodes are designed to clamp harmful transients such as ESD and surge. These diodes provide ESD protection up to ±30kV and feature <20pF IO capacitance with ultra-low leakage current. They are AEC-Q101 qualified for automotive applications and suitable for I/O and power line protection.
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Analog Devices Inc. MAX74810 SemiconductorsDescription
The Analog Devices MAX74810 is a dual-channel, zero-drift operational amplifier designed for low noise and power applications. It features rail-to-rail output and is optimized for accuracy over a wide range of conditions. With a temperature range of -40°C to +125°C, it is suitable for various applications including load cells and automotive sensors.
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Infineon Technologies IRS9103AXTSA1 SemiconductorsDescription
Infineon VCSEL REAL3™ Laser Diode Driver ICs are cost-effective, small-footprint ICs for Time-of-Flight (ToF) image sensors for fast-switching laser diodes or LEDs. They allow highly efficient conversion from electrical to optical power and support high modulation frequencies for automotive-grade applications. These drivers are suitable for various applications including LiDar systems and laser distance sensors.
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Texas Instruments SN74CB3T3245 SemiconductorsDescription
Texas Instruments SN74CB3T3245 8-Bit FET Bus Switches are high-speed, TTL-compatible switches with low ON-state resistance for minimal propagation delay. These bus switches support mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. Typical applications include level translation, PCI interface, USB interface, and bus isolation.
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Infineon Technologies 1ED301xMC12I SemiconductorsDescription
Infineon Technologies EiceDRIVER 1ED301xMC12I Gate Driver ICs are opto-compatible, galvanically isolated single-channel gate drivers for IGBT, Si, or SiC MOSFET. These ICs feature exceptional common-mode transient immunity and low propagation delay, making them suitable for high ambient temperatures and fast switching applications. Typical applications include industrial motor drives, EV charging, and solar inverters.
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onsemi NJNJWS200N031L SemiconductorsDescription
The onsemi NVNJWS200N031L Single N-Channel Power MOSFET has a drain-to-source breakdown voltage (V(BR)DSS) of 30V and a continuous drain current (I(D)) rating of 3.3A. It features a low RDS(on) of 200mΩ to minimize conduction losses and a low input capacitance of 89pF. This device is AEC-Q101 qualified and suitable for various applications including low side load switches and DC-DC converters.
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Infineon Technologies IQEH50NE2LM7ZCGATMA1 SemiconductorsDescription
Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies.
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onsemi NTK3139P SemiconductorsDescription
The onsemi NTK3139P P-Channel Single Power MOSFET is designed for low logic level gate drive applications. It features a compact SOT-723 package with built-in ESD protection and a low RDS(on) rating of 0.95Ω at 1.5V. This device is ideal for load/power switching and battery management in ultra-small portable electronics.
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Analog Devices Inc. OPx82 SemiconductorsDescription
The Analog Devices OPx82 series includes the OP282 (dual) and OP482 (quad) operational amplifiers, designed for low power consumption while delivering high speed. These amplifiers feature a typical slew rate of 9V/µs and a gain bandwidth of 4MHz, making them suitable for battery-powered applications. With a JFET input stage, they maintain low bias current and offset voltage, ensuring high performance across various conditions.
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Diodes Incorporated DTH1006P5 SemiconductorsDescription
The Diodes Inc. DTH1006P5 is a 600V peak repetitive reverse voltage rectifier in a PowerDI®5 package. It features a 10A average rectified output current and a 120A non-repetitive peak forward surge current. This rectifier offers high surge current capability, low leakage current, and fast reverse-recovery time.
