AI data centres, electric vehicles and renewable energy systems are all competing for the same limited electrical resources. The efficiency of power conversion now determines how much capability can be delivered within the same grid footprint. As system voltages rise beyond 800 V, conventional silicon and lateral GaN devices start to reach their limits in both thermal performance and power density.
onsemi has unveiled a new class of vertical gallium nitride (vGaN) power semiconductors designed to overcome those limits. Built on a GaN-on-GaN substrate, the devices move current directly through the thickness of the material rather than across its surface. By using the semiconductor itself as both channel and support, the design removes the usual constraints of silicon or sapphire foundations.
The result is a structure that can tolerate much higher voltages, switch faster and generate less heat. These traits make it especially well suited for compact, high-power systems where efficiency and ruggedness matter.
How the Technology Works
Conventional GaN transistors are made on non-GaN substrates such as silicon or sapphire. In those lateral layouts the current travels sideways between source and drain, and as voltage climbs the electric field becomes concentrated near the surface of the device. Controlling that field gets harder as designers push toward higher voltages, which in turn restricts operational range. By letting current travel vertically through the GaN crystal, onsemi’s architecture spreads the field throughout the bulk of the device, maintaining control and stability even at 700 V, 1,200 V and beyond.
Timing Precision and Encryption for Mission-Critical Applications
The performance gains of vGaN align with sectors that need compact efficient thermally stable designs. In AI data centres it can boost rack power density for 800 V DC-DC converters. In electric vehicles it allows smaller inverters and faster chargers that extend driving range. Applications also include renewable energy, energy storage, industrial automation and aerospace systems, where weight, heat and efficiency are critical.
Why It Matters
Energy efficiency has become a competitive metric in both computing and transport. By combining high-voltage capability with GaN’s inherent switching speed, onsemi’s vertical architecture gives designers a scalable path to higher performance without compromising reliability. Sampling has now begun for 700 V and 1,200 V devices, marking an early step toward wider adoption of GaN-on-GaN power technology in mainstream designs.
Learn more and read the original announcement on www.onsemi.com
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