AI servers are pushing far more current through their 48 volt front ends, and that creates pressure on the components responsible for controlled inrush and fault protection. System architects need MOSFETs that can withstand high peak currents, survive harsh thermal conditions and keep conduction losses low without stacking devices in parallel. AOS has introduced the AOLV66935 to address those demands in a smaller footprint while maintaining a wide safe operating area.
Why High SOA Matters in AI Servers
As GPU and TPU power levels rise, the 48 volt distribution path faces heavier surge conditions during hot swap. The MOSFET sitting in that path sees high stress when boards power on or when transients propagate through shared backplanes. A wide SOA gives designers confidence that the device will survive those events without early degradation. The AOLV66935 is positioned as a robust choice for these environments. It is tested at both 25 degrees Celsius and 125 degrees Celsius, which helps engineers understand behaviour across real operating ranges rather than relying on idealised curves.
Key Technical Capabilities
The device uses AOS’ 100 volt AlphaSGT technology. It blends low on resistance benefits normally associated with trench structures with the high SOA performance required in demanding hot swap roles. The MOSFET reaches a maximum RDS(on) of 1.85 milliohms at a gate drive of 10 volts. That low figure is important when designers want to limit conduction loss and avoid parallel devices. Reducing device count can simplify thermal spreading and improve reliability in dense server trays.
The LFPAK 8x8 package contributes to the electrical performance. AOS uses a gull wing lead frame and a copper clip assembly to carry large inrush currents while maintaining a compact footprint. The package is significantly smaller than a typical TO 263 device and is compatible with automated optical inspection flows. Thermal management also benefits from the clip because it reduces the thermal path between the die and the PCB, allowing more predictable junction behaviour during repeated cycling.
Design Considerations and Use Cases
Engineers designing 48 volt hot swap stages in rack units, AI accelerators or storage servers will focus on the balance between SOA, conduction loss and thermal headroom. The AOLV66935 addresses these constraints by combining high pulsed current capability, a 175 degree Celsius junction rating and a continuous drain current of over 230 amps at elevated temperature. These characteristics support controlled startup in server blades that experience high inrush during capacitor charging. They also give room for margin when dealing with backplane disturbances or fault recovery events.
The smaller package can help reduce board area in tightly packed accelerator systems where airflow channels are limited. A single MOSFET with both strong SOA and low resistance allows more predictable distribution of heat and may remove the need for larger, slower switching parts that complicate layout.
Implications for Future Designs
As AI servers grow in power density, hot swap devices will remain a limiting factor in how aggressively system power rails can scale. Designers will need MOSFETs that hold their SOA shape at higher temperatures and still deliver low losses under steady load. The AOLV66935 fits this direction by using modern packaging and process technology to raise both robustness and efficiency. It demonstrates how compact power stages can handle heavy server demands without sacrificing reliability.
Learn more and read the original announcement at www.aosmd.com
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