Power delivery inside AI data centers is starting to look very different from conventional server infrastructure. As rack power climbs and 800V HVDC architectures become more common, the switching devices inside the power stage are being pushed toward higher efficiency, higher current capability, and better thermal handling at the same time.
Toshiba Electronics Europe has started test-sample shipments of the TW007D120E, a 1200V trench-gate SiC MOSFET designed for those next-generation power systems. The TW007D120E is a 1200V silicon carbide MOSFET for high-voltage power conversion applications including AI data center power supplies, photovoltaic inverters, UPS systems, EV charging stations, and energy storage equipment. The device uses Toshiba’s trench-gate SiC structure and is supplied in a top-side cooled QDPAK package intended for high power density designs.
Toshiba says the new MOSFET is designed to support the increasing use of 800V HVDC power architectures now appearing in AI server infrastructure.
SiC Switching For 800V HVDC Systems
One of the main pressures in AI data center hardware is the amount of power now moving through the rack. As server power consumption increases, conversion efficiency becomes more important because even relatively small losses scale quickly once large numbers of power stages are deployed together.
The TW007D120E combines low conduction loss with reduced switching loss through Toshiba’s trench-gate SiC structure. The device is specified with a typical drain-source on-resistance of 7.0 mΩ alongside a gate-drain charge of 33 nC. Toshiba also rates the device for 172A DC drain current at Tc=25°C.
Compared with Toshiba’s existing 3rd-generation TW015Z120C SiC MOSFET, the company states that the new device reduces RDS(on)A by roughly 58 percent while improving the RDS(on) × Qgd figure of merit by approximately 52 percent. That figure is notable because it reflects the balance between conduction loss and switching performance rather than focusing on one parameter alone.
Top-Side Cooling And Higher Power Density
The package is also part of the update here. Toshiba is using a QDPAK top-side cooled package, which moves heat away through the top surface of the device rather than relying only on PCB-side thermal paths.
In high-density power stages, thermal handling increasingly affects how much power can realistically be delivered from a given board area. AI server power supplies are already dealing with tighter spacing, higher current levels, and larger thermal loads than earlier server generations.
The device also supports gate-drive voltages between 15V and 18V. According to Toshiba, the combination of lower losses and improved thermal behavior helps reduce heat generation inside the wider power system.
Expanding Toshiba’s SiC Portfolio
Toshiba plans to prepare the TW007D120E for mass production during fiscal year 2026. The company also says it intends to continue expanding its trench-gate SiC MOSFET lineup, including development aimed at automotive applications.
The wider push toward SiC in data center infrastructure is partly being driven by efficiency targets, but also by the physical limits now appearing around power density and cooling inside AI hardware. The TW007D120E test samples are available now.
Learn more and read the original announcement at www.toshiba.semicon-storage.com
Technology Overview
The TW007D120E is a 1200V trench-gate SiC MOSFET designed for high-voltage power conversion systems including AI data center power supplies, UPS systems, EV charging stations, and renewable energy equipment. The device is supplied in a QDPAK top-side cooled package.
The MOSFET is specified with a typical RDS(on) of 7.0 mΩ, gate-drain charge of 33 nC, and DC drain current rating of 172A. Toshiba states the device improves RDS(on)A by approximately 58 percent compared with its previous-generation TW015Z120C device.
Frequently Asked Questions
What applications is the TW007D120E designed for?
The device is intended for AI data center power supplies, photovoltaic inverters, UPS systems, EV charging stations, and energy storage equipment.
Why is top-side cooling important in high-power systems?
Top-side cooling helps improve heat dissipation in dense power stages where thermal handling limits power density and board layout flexibility.
What voltage and current ratings does the TW007D120E support?
The MOSFET is rated for 1200V drain-source voltage and 172A DC drain current at Tc=25°C.
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