Toshiba Introduces 80V Power MOSFET with 1.4mΩ On-Resistance for Industrial Power Supplies

Toshiba Electronics Europe has introduced the TPM1R408RH, an 80V N-channel power MOSFET based on its latest U-MOS11-H process technology. Designed for high-efficiency switched-mode power supplies (SMPS) used in data center and communications infrastructure, the device combines a maximum on-resistance of 1.4mΩ with an improved figure-of-merit (FOM) to reduce power losses and support higher switching performance.

According to Toshiba, the TPM1R408RH achieves approximately 26% lower RDS(on) than the previous-generation TPM1R908QM. The new device has a maximum RDS(on) of 1.4mΩ at a gate-source voltage of 10V and a drain current of 50A.

Improved Switching Performance

The TPM1R408RH also improves the trade-off between on-resistance and total gate charge. The device has a total gate charge of 80nC, resulting in an RDS(on) × Qg figure-of-merit of 112mΩ·nC.

Toshiba states that this represents an improvement of approximately 45% compared with the previous-generation TPM1R908QM, which has an FOM of 205.2mΩ·nC. According to the company, the lower figure-of-merit helps reduce switching losses while suppressing drain-source voltage spikes during switching. This can also contribute to lower electromagnetic interference (EMI) in high-speed SMPS designs.

High Current Capability

The TPM1R408RH supports a drain-source voltage of 80V and a maximum continuous drain current of 288A at a case temperature of 25°C.

The MOSFET is housed in Toshiba's SOP Advance(E) package, measuring 4.9mm × 6.1mm. According to Toshiba, the package reduces resistance by approximately 65% and thermal resistance by approximately 15% compared with the company's existing SOP Advance(N) package.

To support power supply development, Toshiba also provides G0 and G2 SPICE models for circuit simulation, with the G2 models designed to reproduce transient switching characteristics more accurately.

Learn more and read the original announcement at Toshiba's Electronics website.

Technology Overview

The Toshiba TPM1R408RH is an 80V N-channel power MOSFET manufactured using the company's U-MOS11-H process. Designed for industrial switched-mode power supplies, the device combines 1.4mΩ maximum on-resistance, an improved switching figure-of-merit, and high current capability in a compact SOP Advance(E) package.

Frequently Asked Questions

What is the TPM1R408RH?

The TPM1R408RH is an 80V N-channel power MOSFET designed for high-efficiency industrial switched-mode power supplies used in data center and communications equipment.

How does it compare with the previous generation?

According to Toshiba, the device provides approximately 26% lower on-resistance and a 45% lower RDS(on) × Qg figure-of-merit than the previous-generation TPM1R908QM.

Which applications is the MOSFET intended for?

The TPM1R408RH is designed for switched-mode power supplies used in industrial equipment, including data center power systems and communications base stations.