Toshiba Adds XPJ1R504PB 40 V Automotive MOSFET

Toshiba Expands S-TOGL MOSFET Lineup with 40 V Automotive Device

Toshiba has introduced the XPJ1R504PB, a 40 V AEC-Q101 qualified N-channel MOSFET for automotive 12 V systems. The S-TOGL packaged device offers 120 A current capability, 1.54 mΩ maximum RDS(on) and improved thermal performance for inverters, motor drives and load switches.

Toshiba 21 July 2026 Toshiba

Uploaded image Toshiba has introduced the XPJ1R504PB, a 40 V N-channel power MOSFET for automotive 12 V systems. The AEC-Q101 qualified device is housed in the company's thermally enhanced S-TOGL package and delivers a maximum on-resistance of 1.54 mΩ, expanding Toshiba's existing S-TOGL MOSFET family for applications requiring high current capability and improved thermal performance.

The XPJ1R504PB is rated for a continuous drain current of 120 A and targets automotive applications including inverters, semiconductor relays, load switches and motor drives.

S-TOGL Package

The S-TOGL package is designed to support compact, high-density PCB layouts while improving heat dissipation. Toshiba says the package uses a thick copper frame that reduces the channel-to-case transient thermal impedance (Zth(ch-c)) to 0.76°C/W, helping to suppress heat generation during operation.

The package also adopts a post-less structure that integrates the chip's source-electrode connection with the external leads, reducing parasitic resistance and contributing to the device's low RDS(on) specification.

Designed for Automotive Reliability

To improve solder joint reliability, the S-TOGL package uses gull-wing leads that help relieve mechanical stress caused by temperature cycling and PCB expansion. This is intended to improve mounting reliability in automotive environments where components are exposed to wide operating temperature ranges. A multi-pin source lead structure also improves current distribution, supporting the device's 120 A current rating.

Expanding the S-TOGL Family

The XPJ1R504PB joins Toshiba's existing S-TOGL MOSFET lineup, which already includes the XPJR6604PB and XPJ1R004PB. The addition gives designers another low RDS(on) option for automotive 12 V power systems across a range of performance requirements.

The XPJ1R504PB is available now.

Learn more and read the original announcement at Toshiba Electronics website.

Technology Overview

The Toshiba XPJ1R504PB is an AEC-Q101 qualified 40 V N-channel power MOSFET for automotive 12 V systems. It combines a maximum RDS(on) of 1.54 mΩ with a 120 A current rating in Toshiba's S-TOGL package, which incorporates a thick copper frame, gull-wing leads and a post-less structure to improve thermal performance, reliability and current handling.

Frequently Asked Questions

What is the Toshiba XPJ1R504PB?

The XPJ1R504PB is a 40 V AEC-Q101 qualified N-channel power MOSFET for automotive applications. It is housed in Toshiba's S-TOGL package and is designed for 12 V power systems.

What are the key specifications?

The MOSFET offers a maximum RDS(on) of 1.54 mΩ at VGS = 10 V, supports up to 120 A drain current and features a channel-to-case transient thermal impedance of 0.76°C/W.

What applications is the XPJ1R504PB intended for?

Target applications include automotive inverters, semiconductor relays, load switches and motor drives used in 12 V vehicle systems.

Toshiba

Toshiba Electronics Europe GmbH is the European electronic components business of Toshiba Electronic Devices and Storage Corporation. The company offers a broad portfolio of innovative semiconductor and storage solutions, including power devices, logic ICs, optoelectronics, and custom SoCs. Toshiba is committed to advancing energy efficiency, miniaturisation, and high-reliability technologies that power everything from industrial automation to next-generation communications infrastructure.