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Filtering by tag: "silicon carbide"

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South Korea Pushes For National Semiconductor Power Sovereignty

South Korea has launched a national task force led by Koo Sang-mo to achieve power semiconductor self-reliance by 2030, focusing on silicon carbide (SiC) and gallium nitride (GaN) technologies for EVs, power grids, AI data centers, defense, and robotics.

South Korea, power semiconductors, Koo Sang-mo, silicon carbide, SiC, gallium nitride, GaN, EVs, AI data centers, power grids, defense technology, robotics, semiconductor sovereignty, national infrastructure, energy security

Navitas Introduces 3300 V and 2300 V UHV SiC Platform For Demanding Power Systems

Navitas adds 3300 V and 2300 V SiC devices with advanced field control and robust packaging for demanding high voltage power systems.

navitas, genesic, silicon carbide, sic mosfet, 3300 v, 2300 v, sicpak g+, power modules, high voltage design, energy infrastructure, ai datacenter power, renewables, battery storage, semiconductors

Vishay Adds Gen 3 SiC Schottky Diodes in SlimSMA Package for Power Efficiency

Vishay launches new Gen 3 650 V and 1200 V SiC Schottky diodes with high isolation, compact size, and fast switching performance.

Vishay, SiC diodes, Schottky, silicon carbide, power conversion, Gen 3, SlimSMA, DO 221AC, high voltage, PFC, efficiency, industrial, Power

ROHM Launches DOT-247 SiC Module with 2.3× Power Density

ROHM’s new DOT-247 SiC module delivers 2.3× power density, 15% lower thermal resistance, and supports advanced multi-level power topologies.

rohm, dot-247, silicon carbide, sic module, power electronics, pv inverters, ups systems, multi-level inverters, half-bridge, common-source, aec-q101, industrial power

SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

SemiQ, QSiC Dual3, silicon carbide, SiC MOSFET, half-bridge module, 1200 V, Schottky barrier diode, power converter, data center cooling, liquid chiller, energy storage, grid converter, industrial drive, IGBT replacement, power density, RDSon, active front end, compressor drive, power module

ROHM SiC MOSFETs Power Toyota’s New bZ5 BEV in Chinese Market

ROHM’s SiC MOSFETs power Toyota’s new bZ5 BEV in China, boosting inverter efficiency and range through HAIMOSIC’s high-volume production.

ROHM, SiC MOSFET, traction inverter, Toyota bZ5, electric vehicle, BEV, HAIMOSIC, wide bandgap semiconductor, EV power module, Chinese EV market, FAW Toyota, BYD Toyota, automotive electronics, EV range, silicon carbide