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Filtering by tag: "Navitas Semiconductor"

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Navitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247

Navitas expands its 5th-generation GeneSiC silicon carbide MOSFET portfolio with top-side cooled QDPAK and low-profile TO-247-4L packages designed for AI data centers, grid infrastructure, and industrial power systems operating at 1200 V.

Navitas Semiconductor, Navitas GeneSiC, SiC MOSFET, Silicon Carbide MOSFET, Power Semiconductors, 1200 V MOSFET, QDPAK Package, TO-247-4L Package, Top-Side Cooling, Power Electronics, AI Data Center Power, Industrial Electrification, Energy Infrastructure, High-Voltage Switching, Trench Assisted Planar, SiC Power Devices, High Power Density, Power Conversion Systems

Navitas GeneSiC 5th Gen SiC MOSFET Improves Switching Loss

Navitas 5th generation GeneSiC 1200V SiC MOSFET platform improves RDS(on) × QGD figure of merit, soft body diode behavior, and reliability for AI data centers, grid infrastructure, and industrial power conversion.

Navitas Semiconductor, GeneSiC, 5th generation SiC, 1200V SiC MOSFET, trench assisted planar, TAP technology, silicon carbide MOSFET, RDS(on) QGD FoM, soft body diode, AI data center power, grid infrastructure converters, industrial electrification, SiC reliability, dynamic reverse bias testing, high voltage power semiconductors

Navitas GeneSiC SiC MOSFETs Add QDPAK and Low-Profile TO-247

Navitas GeneSiC 5th Gen SiC MOSFET Improves Switching Loss

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