Latest Components

ams OSRAM PSI5 Programmer Board

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ams OSRAM 144780417 Power

Description

ams ORAM PSI5 Programmer Board is used for programming PSI5 products such as the AS5172 product family. This programmer board can program the device only via UART using the PSI5 protocol. For reading ams ORAM PSI5 data, a dedicated PSI5 transceiver is required.

ARX383 Hyperlux Image Sensor Power Tree

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onsemi ARX383 Power

Description

The onsemi ARX383 Hyperlux Image Sensor Power Tree is designed to support multiple input voltages including 5V, 18V, and 48V. It enables flexible powering through various methods such as LDOs and Buck Converters, while also providing power for local and remote ISPs. This ensures optimized performance across diverse configurations.

Microchip Technology MCP1781 High-Voltage LDO Regulators

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Microchip Technology MCP1781 Power

Description

Microchip Technology MCP1781 High-Voltage Low Dropout (LDO) Regulators are designed to generate 200mA of output current with an input voltage range of 4.3V to 55V. They are suitable for automotive applications and high-voltage battery packs, featuring low quiescent current and thermal shutdown protection. Available in fixed-output and adjustable-output versions, they ensure stable performance with ceramic capacitors.

AR0145 Hyperlux Image Sensor Power Tree

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onsemi AR0145 Power

Description

The onsemi AR0145 Hyperlux Image Sensor Power Tree is designed to support multiple input voltages, including 5V, 18V, and 48V. It enables flexible powering through various methods such as LDOs and Buck Converters, while also providing power for local and remote ISPs. This ensures optimized performance across diverse configurations.

Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs

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Infineon Technologies IPMOSFET80V Power

Description

Infineon Technologies N-channel OptiMOS™ 7 80V Power MOSFETs are N-channel, normal level devices with superior thermal resistance. The series offers a soft-recovery body diode and is rated to 175°C. These MOSFETs are optimized for motor drives and synchronous rectification applications.

Vishay Bidirectional eFuse Reference Design

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Vishay EFUSE-800V40ABI Power

Description

The Vishay EFUSE-800V40ABI Bidirectional eFuse handles voltages up to 950V and a 40A current rating, enhancing vehicle safety by protecting against voltage spikes, overcurrent, and rising temperatures. It features a low TCR shunt for precise current measurement and a robust I/O port providing ESD protection. This eFuse is based on Vishay's SiC MOSFETs.

Schurter EKO High-Performance HV Fuses

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Schurter EKO Power

Description

Schurter EKO High-Performance HV Fuses feature rated voltages of 500VDC or 1000VDC and are designed for industrial and energy applications. These robust square-body fuses withstand mechanical vibration, shock, chemical exposure, and extreme temperatures from -40°C to +125°C. The series comes in multiple mounting options and is suitable for applications like charging infrastructures and energy storage systems.

M5Stack Atom DTU NBIoT2 Wireless Data Transmission Units

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M5Stack DTU-NBIoT2 Power

Description

The M5Stack Atom DTU NBIoT2 v1.1 is a programmable wireless data transmission unit designed for global Cat-NB frequency bands. It features an I/O expansion chip for power control and includes an ADC monitoring circuit for real-time power status. This DTU integrates a SIM7028 communication module and supports various network protocols.

Bi-Directional GaNFast™ Power Switches

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Navitas Semiconductor NV6428 Power

Description

Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches are designed to block voltage in both directions. They feature a unique substrate clamp technology that optimizes switching performance during 4-quadrant operation. Ideal for high-frequency, high-power-density applications in solar, industrial, motor drive, and EV segments.

EPC EPC2304 Enhancement-Mode GaN Power Transistor

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Efficient Power Conversion (EPC) EPC2304 Power

Description

The EPC2304 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is designed for ultra-high switching frequency applications with low on-state losses. It features a low drain-source on resistance of 3.5mΩ typical and offers zero reverse recovery losses. This compact 200V power transistor comes in a 3mm x 5mm QFN package, ideal for high power density.

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