Latest Components

TSZ181H Automotive-Grade Zero-Drift Operational Amplifier

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STMicroelectronics TSZ181H Semiconductors

Description

The TSZ181H is an automotive-grade, high-accuracy operational amplifier featuring a maximum offset voltage of 25 µV and a 3 MHz gain bandwidth. It offers rail-to-rail input/output, low power consumption, and operates over a wide temperature range up to 150°C. This op amp is ideal for high-accuracy, high-bandwidth sensor interfaces in demanding automotive environments.

STMicroelectronics TSB612 Low Power Rail-to-Rail Output 36V Operational Amplifier

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STMicroelectronics TSB612 Semiconductors

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The TSB612 is a low power, rail-to-rail output operational amplifier with an extended supply voltage range up to 36V. It offers high accuracy, low offset voltage, and excellent speed-to-power consumption ratio, making it ideal for industrial and automotive applications. Its compact package allows for use in space-constrained designs.

STMicroelectronics TN3050H-12WY

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STMicroelectronics TN3050H-12WY Semiconductors

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The TN3050H-12WY is a 1200 V, 30 A automotive grade SCR Thyristor designed for demanding applications such as on-board chargers and AC relays. It offers high surge current capability and robust voltage performance for reliable power switching. The device is AEC-Q101 qualified and housed in a TO-247 package.

STW75N60DM6 - N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET

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STMicroelectronics STW75N60DM6 Semiconductors

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The STW75N60DM6 is a high voltage N-channel Power MOSFET featuring fast recovery, low RDS(on), and high efficiency switching. It is designed for demanding high-efficiency bridge topologies and ZVS phase-shift converters. The device comes in a TO-247 package and is part of the MDmesh DM6 series.

STSAFE-A110 Secure Element

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STMicroelectronics STSAFE-A110 Semiconductors

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The STSAFE-A110 is a secure element designed for authentication and secure data management in IoT, smart home, and industrial devices. It features advanced cryptographic capabilities, secure key storage, and a secure operating system on a robust microcontroller. The device supports I2C communication and is ideal for applications requiring high security and authentication.

STPSC20H12 - 1200 V, 20 A High Surge Silicon Carbide Power Schottky Diode

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STMicroelectronics STPSC20H12 Semiconductors

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The STPSC20H12 is a high-performance 1200 V, 20 A silicon carbide Schottky power diode designed for hard switching and PFC applications. It features negligible reverse recovery, robust high voltage capability, and temperature-independent switching behavior. Its silicon carbide substrate enables low forward voltage and high surge capability for enhanced robustness.

ST33GTPMISPI - Industrial TPM 2.0 device with an SPI interface

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STMicroelectronics ST33GTPMISPI Semiconductors

Description

The ST33GTPMISPI is a cost-effective, high-performance Trusted Platform Module (TPM) designed for industrial embedded systems. It is TPM 2.0 compliant and features a secure Arm SecurCore SC300 32-bit RISC core, advanced cryptographic capabilities, and robust hardware security. The device supports firmware upgrades and is certified for high security standards.

STMicroelectronics SCTW35N65G2V Silicon Carbide Power MOSFET

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STMicroelectronics SCTW35N65G2V Semiconductors

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The SCTW35N65G2V is a 650 V, 55 mOhm typical, 45 A silicon carbide power MOSFET in a HiP247 package. It features low on-resistance, excellent switching performance, and minimal switching loss variation with temperature. Designed using ST's 2nd generation SiC MOSFET technology, it is ideal for high-efficiency power applications.

onsemi NCD5703/NCV5703 IGBT Gate Drivers

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onsemi NCD5703/NCV5703 Semiconductors

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The NCD5703/NCV5703 series are high-current, high-performance stand-alone IGBT gate drivers designed for medium-to-high power applications such as induction heating, welding, solar inverters, and motor control. They feature advanced protection functions including DESAT protection, Active Miller Clamp, and accurate UVLO. These drivers simplify system design by reducing external components and are available in an 8-pin SOIC package.

TSC2011H High Voltage Precision Bidirectional Current Sense Amplifier

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STMicroelectronics TSC2011H Semiconductors

Description

The TSC2011H is a high voltage, precision, bidirectional current sense amplifier with a fixed gain of 60 V/V. It operates over a wide common mode voltage range from -20V to +70V and is suitable for precision current measurement, overcurrent protection, and current monitoring. The device features low offset voltage, low gain error, and operates from a 2.7V to 5.5V supply.

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