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YAGEO PTLA Transformer Integrates Resonant Inductance For LLC

YAGEO expands its power magnetics portfolio with the PTLA / PTLC Series LLC transformers delivering up to 3.6 kW while integrating resonant inductance directly into the magnetic structure to reduce component count and improve power density.

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Toshiba Expands DTMOSVI 600 V MOSFET Series with Four-Pin Package for Higher Efficiency

Toshiba’s new DTMOSVI 600 V MOSFETs in the TO-247-4L(X) package reduce switching loss and improve efficiency for servers, UPS and PV inverters.

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Power Integrations Pushes Flyback Into 440 W Range

Power Integrations has introduced TOPSwitchGaN flyback ICs that push offline flyback power supplies to 440 W, offering a simpler alternative to resonant and LLC designs in appliances, e-bike chargers, and industrial systems.

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SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

SemiQ has released new 1200 V Gen3 SiC MOSFET SOT-227 modules with 7.4, 14.5 and 34 mΩ options for chargers, solar inverters and high-power systems.

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GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

GlobalFoundries and Navitas form a long-term partnership to expand U.S. GaN technology and manufacturing for AI datacenters, energy and high-power systems.

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AOS Backs NVIDIA’s 800 VDC Power Architecture With SiC and GaN for Next-Generation AI Factories

AOS introduces SiC, GaN and MOSFET solutions to support NVIDIA’s 800 VDC architecture for high-efficiency AI data centers, from AC-to-DC conversion to rack-level power stages.

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RECOM RVP6501 Push-Pull Driver Supports Discrete DC/DC

RECOM introduces the RVP6501 push-pull transformer driver IC for discrete isolated DC/DC converters, delivering 500mA drive capability with adaptive dead-time control and current monitoring.

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EPC Develops 6 kW 800 VDC GaN Converter for Next-Generation AI Data Centres

EPC’s new 6 kW GaN converter uses an ISOP topology to step 800 VDC to 12.5 V at 97 % efficiency, advancing power delivery for future AI data centres.

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Renesas Powers 800V Direct Current Architecture for AI Data Centres

Renesas’ GaN FETs and power semiconductors enable efficient 800V DC distribution in AI data centres, improving power density and reducing energy losses.

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Vishay Adds Gen 3 SiC Schottky Diodes in SlimSMA Package for Power Efficiency

Vishay launches new Gen 3 650 V and 1200 V SiC Schottky diodes with high isolation, compact size, and fast switching performance.

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YAGEO PTLA Transformer Integrates Resonant Inductance For LLC

Toshiba Expands DTMOSVI 600 V MOSFET Series with Four-Pin Package for Higher Efficiency

Power Integrations Pushes Flyback Into 440 W Range

SemiQ Expands 1200 V Gen3 SiC MOSFET Line with New SOT-227 Modules

GlobalFoundries and Navitas Advance U.S. GaN Manufacturing for AI Datacenters and High-Power Systems

AOS Backs NVIDIA’s 800 VDC Power Architecture With SiC and GaN for Next-Generation AI Factories

RECOM RVP6501 Push-Pull Driver Supports Discrete DC/DC

EPC Develops 6 kW 800 VDC GaN Converter for Next-Generation AI Data Centres

Renesas Powers 800V Direct Current Architecture for AI Data Centres

Vishay Adds Gen 3 SiC Schottky Diodes in SlimSMA Package for Power Efficiency

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