News | The Component Club

RECOM’s 120 W DIN Rail Supply Shrinks Power Density Requirements

RECOM introduces a 120 W DIN rail PSU with 500 W per liter density, wide temperature operation and robust industrial load handling.

RECOM, RACPRO1 S120, DIN rail power supply, industrial PSU, 120 W supply, high power density, 500 W per liter, convection cooling, 24 V supply, 48 V supply, back feed tolerance, inrush limiting, EN 61000, IEC 61010, DC OK signal, panel design, automation, energy distribution, test and measurement

Cincon CFM600S Brings 600W Power Delivery to Space-Limited Systems

Cincon’s CFM600S series provides 600W power in a compact format with strong thermal behavior for dense industrial and telecom systems.

Cincon, CFM600S, AC DC power supply, 600W power supply, high density power, conduction cooled supply, thermal performance, natural convection, wide AC input, efficiency, low inrush current, auxiliary rails, industrial automation, telecom equipment, embedded systems, power design

MCC’s SL100N10L MOSFET Targets Compact Switching in Space-Limited Designs

MCC’s SL100N10L delivers low loss 100 V switching in a compact SOT23 package for space limited embedded systems.

MCC, SL100N10L, N channel MOSFET, 100V MOSFET, logic level MOSFET, SOT23 MOSFET, low RDSon MOSFET, trench MOSFET, power switching, embedded electronics, IoT devices, battery protection, portable electronics, industrial control, low power switching, microcontroller driven switching, compact PCB design, space constrained systems, semiconductor devices

Littelfuse LF21173TMR and LF21177TMR Target Always-On Magnetic Sensing

Littelfuse introduces omnipolar magnetic switches designed for always-on, low-power sensing in compact systems.

Littelfuse, LF21173TMR, LF21177TMR, magnetic switch, omnipolar sensor, low power sensing, battery-powered devices, smart meters, electronic locks

Chinese Researchers Create New 3D DRAM Technology

DRAM underpins modern computing, but traditional planar designs are struggling to scale as memory demands rise. Researchers at IME CAS have unveiled a novel 3D DRAM architecture using a dual-gate 4F2 2T0C cell, enabling higher density, multi-level storage, and improved performance, potentially paving the way for dramatically larger RAM capacities.

DRAM, 3D DRAM, memory technology, semiconductor research, high density memory, IME CAS, Chinese research, 3D memory, HBM, Hybrid Memory Cube, RAM scaling, computer memory, advanced semiconductors

Intel Breaking the 2nm Barrier with Panther Lake on 18A Process

As the semiconductor industry pushes beyond 2nm toward angstrom-class technologies, manufacturing faces extreme physical, economic, and scientific limits. This article explores sub-2nm scaling challenges, quantum effects, EUV and high-NA lithography costs, Intel’s 18A Panther Lake ambitions, foundry expansion in the US, and why future progress may rely on chiplets, 3D packaging, and new integration strategies rather than simple transistor shrinking.