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TI Unveils Power Solutions for Scalable AI Data Centres

Texas Instruments introduces new power management solutions and design resources to support scalable 800V AI data centre architectures.

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TE Connectivity Unveils Inside Device Connectivity Solutions for Automotive Modules

TE Connectivity’s in-device connectivity portfolio brings board-to-board, wire-to-board, flex and wire connectors optimized for automotive ECUs and SDR architectures.

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Semtech Samples 1.6T Multimode PMD Solutions for AI Data Centers

Semtech’s GN1878 VCSEL driver and GN1836 TIA support power-efficient 1.6T multimode optical links, targeting AI training clusters and hyperscale data centers.

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Nexperia 100 V CCPAK1212 MOSFETs Target 48 V Automotive Power Systems

Nexperia’s CCPAK1212 MOSFETs combine 0.99 mΩ RDS(on), 460 A current capability, and copper-clip packaging to shrink PCB space and boost efficiency.

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ROHM Launches DOT-247 SiC Module with 2.3× Power Density

ROHM’s new DOT-247 SiC module delivers 2.3× power density, 15% lower thermal resistance, and supports advanced multi-level power topologies.

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Digi Launches Medical-Grade Serial Server for Patient Care

Digi’s Connect EZ 4 WS bridges medical serial equipment to modern networks with IEC 60601-1 compliance, encryption, Wi-Fi, and remote management.

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TI TMAG5134 Hall-Effect Switch Reaches 1 mT Sensitivity

Texas Instruments’ TMAG5134 Hall-effect switch detects magnetic fields down to 1 mT, enabling smaller magnets, lower system cost, and longer battery life.

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Nexperia Brings MLPAK MOSFETs to Automotive Designs

Nexperia’s new MLPAK33-WF and MLPAK56-WF MOSFETs save board space while maintaining thermal and electrical performance for automotive power designs.

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Littelfuse DFNAK3 Compact TVS Diodes Handle 3 kA Surges

Littelfuse DFNAK3 Series TVS diodes deliver 3 kA surge protection in a compact DFN package, saving 70% PCB space for PoE, telecom, and data center systems.

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Researchers Create New Gallium Oxide Semiconductor With Superior Current Capabilities

Researchers at Nagoya University have developed stable p-type gallium oxide (Ga₂O₃) diodes capable of handling twice the current of previous devices, addressing a key limitation that held the material back. Could this breakthrough make Ga₂O₃ a practical alternative to GaN, and what applications will benefit most from its improved efficiency?

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