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Alpha and Omega’s 600V αMOS E2 Device Targets High Stress Power Designs

AOS introduces the αMOS E2 600V MOSFET with robust diode behavior and strong switching performance for high density power and solar systems.

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Alpha and Omega Semiconductor MOSFETs Target AI Server Power Density

Alpha and Omega Semiconductor has introduced the AONC40202 and AONC68816 MOSFETs in DFN 3.3 x 3.3 double-sided cooling source-down packages for AI server Intermediate Bus Converter applications.

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TDK’s μPOL FS1525 Pushes Vertical Power Delivery Toward 200 A Density

TDK’s FS1525 μPOL module delivers 25 A per unit and scales to 200 A for vertical power delivery, integrating magnetics, MOSFETs and control in a compact package for AI, FPGA and data center platforms.

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Littelfuse 200 V X4-Class MOSFET Targets High-Current Power Systems

The Littelfuse MMIX1T500N20X4 delivers 200 V and 480 A performance with topside cooling for compact high current power systems.

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Infineon TLVR Power Module Pushes Current Density Past 2 A/mm²

Infineon’s TDM24745T quad-phase TLVR power module delivers over 2 A/mm² current density and up to 320 A peak current for AI accelerators, GPUs, and dense server power architectures where transient response and board space are under pressure.

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TDK Expands i7A Series With 1000 W DC-DC Buck Converters in a 1/16th Brick

TDK’s latest i7A DC-DC buck converters deliver up to 1000 W and 80 A in a compact 1/16th brick footprint, offering wide input ranges and efficiencies up to 99 percent.

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RECOM’s 240W DIN Rail Supply Enables High Power In Tight Spaces

RECOM’s RACPRO1-S240E DIN rail supply delivers 240W with convection cooling for compact industrial and automation systems.

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STMicroelectronics Pushes 800 VDC Power Closer to AI GPUs

STMicroelectronics expands its 800 VDC power architecture with new 12V and 6V conversion stages, enabling more efficient power delivery closer to GPUs in high-density AI data center infrastructure.

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onsemi Introduces Vertical GaN Semiconductors for High-Density Power Systems

onsemi introduces vertical GaN-on-GaN power semiconductors with 700 V and 1,200 V capability, cutting switching losses and boosting power density for AI and EV systems.

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SemiQ Dual3 SiC Modules Push IGBT Drop-In Further

SemiQ’s 1200 V QSiC Dual3 half-bridge modules combine low RDSon SiC MOSFETs, optional Schottky diodes, and high power density to help replace IGBT modules in data center cooling, energy storage, and industrial power converters.

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